Inventor
KANG YOUN-SEON
KR20 patents
⚠️ This page may combine multiple inventors who share the name “KANG YOUN-SEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7902048B2Mar 8, 2011
Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer
SAMSUNG ELECTRONICS CO LTD32 citations92
US9184218B2Nov 10, 2015
Semiconductor memory device having three-dimensional cross point array
SAMSUNG ELECTRONICS CO LTD10 citations84
US9391269B2Jul 12, 2016
Variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US8003162B2Aug 23, 2011
Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7777213B2Aug 17, 2010
Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7737527B2Jun 15, 2010
Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US8017929B2Sep 13, 2011
Phase change material layers and phase change memory devices including the same
SAMSUNG ELECTRONICS CO LTD5 citations60
US12211891B2Jan 28, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations59
US7994492B2Aug 9, 2011
Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US10276793B2Apr 30, 2019
Variable resistance memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9431458B2Aug 30, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9269746B2Feb 23, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7993963B2Aug 9, 2011
Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7754586B2Jul 13, 2010
Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51