Inventor

NOH JIN-SEO

KR18 patents

⚠️ This page may combine multiple inventors who share the name “NOH JIN-SEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NOH JIN-SEO

SAMSUNG ELECTRONICS CO LTD

Phase change memory devices and fabrication methods thereof

Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods

Phase change memory devices and fabrication methods thereof

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories

Method of operating and structure of phase change random access memory (PRAM)

Phase change random access memory and method of operating the same

Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same

Method of fabricating Schottky barrier transistor

Phase-change random access memory and programming method

Phase-change RAM and method for fabricating the same

Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same

Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities

Method of fabricating Schottky barrier transistor

Phase-change ram and method for fabricating the same

Semiconductor device and method of fabricating metal gate of the same

Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device

Method of fabricating phase change RAM including a fullerene layer

PARK SUNG-HO

Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same