Inventor
HAYDEN JAMES D
US52 patents
Patents
50 patentsUS5398200AMar 14, 1995
Vertically formed semiconductor random access memory device
MOTOROLA INC160 citations99
US5308782AMay 3, 1994
Semiconductor memory device and method of formation
MOTOROLA INC461 citations99
US5241193AAug 31, 1993
Semiconductor device having a thin-film transistor and process
MOTOROLA INC132 citations98
US5665202ASep 9, 1997
Multi-step planarization process using polishing at two different pad pressures
MOTOROLA INC103 citations97
US5451543ASep 19, 1995
Straight sidewall profile contact opening to underlying interconnect and method for making the same
MOTOROLA INC147 citations97
US5510278AApr 23, 1996
Method for forming a thin film transistor
MOTOROLA INC67 citations96
US5485420AJan 16, 1996
Static-random-access memory cell and an integrated circuit having a static-random-access memory cell
MOTOROLA INC53 citations96
US5407847AApr 18, 1995
Method for fabricating a semiconductor device having a shallow doped region
MOTOROLA INC53 citations96
US5408130AApr 18, 1995
Interconnection structure for conductive layers
MOTOROLA INC86 citations96
US5405806AApr 11, 1995
Method for forming a metal silicide interconnect in an integrated circuit
MOTOROLA INC58 citations96
US5371026ADec 6, 1994
Method for fabricating paired MOS transistors having a current-gain differential
MOTOROLA INC85 citations96
US5348903ASep 20, 1994
Process for fabricating a semiconductor memory cell having thin-film driver transistors overlapping dual wordlines
MOTOROLA INC70 citations96
US5334861AAug 2, 1994
Semiconductor memory cell
MOTOROLA INC74 citations96
US5262352ANov 16, 1993
Method for forming an interconnection structure for conductive layers
MOTOROLA INC92 citations96
US5213989AMay 25, 1993
Method for forming a grown bipolar electrode contact using a sidewall seed
MOTOROLA INC57 citations96
US5824579AOct 20, 1998
Method of forming shared contact structure
MOTOROLA INC29 citations93
US5668021ASep 16, 1997
Process for fabricating a semiconductor device having a segmented channel region
MOTOROLA INC46 citations93
US5498889AMar 12, 1996
Semiconductor device having increased capacitance and method for making the same
MOTOROLA INC50 citations93
US5418393AMay 23, 1995
Thin-film transistor with fully gated channel region
MOTOROLA INC53 citations93
US5376562ADec 27, 1994
Method for forming vertical transistor structures having bipolar and MOS devices
MOTOROLA INC29 citations93
US5373170ADec 13, 1994
Semiconductor memory device having a compact symmetrical layout
MOTOROLA INC52 citations93
US5330929AJul 19, 1994
Method of making a six transistor static random access memory cell
MOTOROLA INC45 citations93
US5324960AJun 28, 1994
Dual-transistor structure and method of formation
MOTOROLA INC37 citations93
US5252849AOct 12, 1993
Transistor useful for further vertical integration and method of formation
MOTOROLA INC40 citations93
US5194926AMar 16, 1993
Semiconductor device having an inverse-T bipolar transistor
MOTOROLA INC28 citations93
US5567958AOct 22, 1996
High-performance thin-film transistor and SRAM memory cell
MOTOROLA INC21 citations92
US5543635AAug 6, 1996
Thin film transistor and method of formation
MOTOROLA INC20 citations92
US5377139ADec 27, 1994
Process forming an integrated circuit
MOTOROLA INC29 citations92
US5279976AJan 18, 1994
Method for fabricating a semiconductor device having a shallow doped region
MOTOROLA INC41 citations92
US5235189AAug 10, 1993
Thin film transistor having a self-aligned gate underlying a channel region
MOTOROLA INC22 citations92
US5101257AMar 31, 1992
Semiconductor device having merged bipolar and MOS transistors and process for making the same
MOTOROLA INC24 citations92
US5061646AOct 29, 1991
Method for forming a self-aligned bipolar transistor
MOTOROLA INC37 citations92
US5024971AJun 18, 1991
Method for patterning submicron openings using an image reversal layer of material
MOTOROLA INC45 citations92
US5958508ASep 28, 1999
Process for forming a semiconductor device
MOTOROLA INC29 citations90
US5204277AApr 20, 1993
Method of forming bipolar transistor having substrate to polysilicon extrinsic base contact
MOTOROLA INC33 citations89
US5459688AOct 17, 1995
Semiconductor memory cell and fabrication process
MOTOROLA INC18 citations82
US5413948AMay 9, 1995
Method for forming a dual transistor structure
MOTOROLA INC18 citations82
US5393689AFeb 28, 1995
Process for forming a static-random-access memory cell
MOTOROLA INC18 citations82
US5158898AOct 27, 1992
Self-aligned under-gated thin film transistor and method of formation
MOTOROLA INC21 citations82
US6136678AOct 24, 2000
Method of processing a conductive layer and forming a semiconductor device
MOTOROLA INC18 citations80
US5473185ADec 5, 1995
Static-random-access memory cell with channel stops having differing doping concentrations
MOTOROLA INC6 citations74
US5374573ADec 20, 1994
Method of forming a self-aligned thin film transistor
MOTOROLA INC6 citations74
US5291053AMar 1, 1994
Semiconductor device having an overlapping memory cell
MOTOROLA INC14 citations74
US5275964AJan 4, 1994
Method for compactly laying out a pair of transistors
MOTOROLA INC6 citations74
US5198375AMar 30, 1993
Method for forming a bipolar transistor structure
MOTOROLA INC14 citations74
US5070029ADec 3, 1991
Semiconductor process using selective deposition
MOTOROLA INC14 citations74
US5721167AFeb 24, 1998
Process for forming a semiconductor device and a static-random-access memory cell
MOTOROLA INC9 citations70
US5624854AApr 29, 1997
Method of formation of bipolar transistor having reduced parasitic capacitance
MOTOROLA INC4 citations63
US5308997AMay 3, 1994
Self-aligned thin film transistor
MOTOROLA INC3 citations63
US5243203ASep 7, 1993
Compact transistor pair layout and method thereof
MOTOROLA INC2 citations63
Showing the top 50 of 52 patents by PatentIndex Score.