Inventor
WOLTERS ROBERTUS A M
NL17 patents
⚠️ This page may combine multiple inventors who share the name “WOLTERS ROBERTUS A M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PHILIPS CORP
12 patentsUS5396095AMar 7, 1995
Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
PHILIPS CORP57 citations94
US5122477AJun 16, 1992
Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes
PHILIPS CORP93 citations94
US5744832AApr 28, 1998
Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier
PHILIPS CORP64 citations93
US5554559ASep 10, 1996
Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric
PHILIPS CORP30 citations90
US6140173AOct 31, 2000
Method of manufacturing a semiconductor device comprising a ferroelectric memory element
PHILIPS CORP33 citations89
US5160762ANov 3, 1992
Method of manufacturing mono-layer capacitors
PHILIPS CORP40 citations88
US5399235AMar 21, 1995
Method of manufacturing a semiconductor device in which a surface of a semiconductor body is provided with mutually-insulated aluminum tracks
PHILIPS CORP15 citations73
US5266524ANov 30, 1993
Method of manufacturing a semiconductor device whereby a layer containing aluminium is deposited on a surface of a semiconductor body
PHILIPS CORP9 citations73
US5858183AJan 12, 1999
Method of manufacturing semiconductor devices each including a semiconductor body with a surface provided with a metallization having a Ti layer and a TiN layer
PHILIPS CORP13 citations70
US5360994ANov 1, 1994
Semiconductor device having a surface with a barrier layer of Tix W1-x
PHILIPS CORP7 citations70
US5366928ANov 22, 1994
Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body
PHILIPS CORP9 citations69
US5278450AJan 11, 1994
Semiconductor contact with discontinuous noble metal
PHILIPS CORP2 citations60