Inventor

BALIGA BANTVAL J

US84 patents

⚠️ This page may combine multiple inventors who share the name “BALIGA BANTVAL J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BALIGA BANTVAL J

GEN ELECTRIC

Multicellular FET having a Schottky diode merged therewith

Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method

Inversion-mode insulated-gate gallium arsenide field-effect transistors

Power rectifier with trenches

Low noise, high frequency synchronous rectifier

Insulated gate bipolar transistor with improved latch-up current level and safe operating area

Gate enhanced rectifier

Power transistor structure with high speed integral antiparallel Schottky diode

Bidirectional field effect semiconductor device and circuit

Circuit including a combined insulated gate bipolar transistor/MOSFET

Metal oxide semiconductor gated turn off thyristor including a schottky contact

Composite circuit for power semiconductor switching

Pinch rectifier

Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices

Method for making vertical channel field controlled device employing a recessed gate structure

Normally-off, gate-controlled electrical circuit with low on-resistance

Method of fabricating a semiconductor device with a base region having a deep portion

Vertical channel field effect transistor

Power field effect devices having small cell size and low contact resistance

Vertical field effect transistor with improved gate and channel structure

Field controlled diode (FCD) having MOS trench gates

Metal oxide semiconductor gated turn-off thyristor including a low lifetime region

Lateral depletion mode tyristor

Metal oxide semiconductor gated turn off thyristor

Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device

Integrated power switching semiconductor devices including IGT and MOSFET structures

Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques

UNIV NORTH CAROLINA STATE

Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

Schottky barrier rectifiers and methods of forming same

Silicon carbide switching device with rectifying-gate

Schottky barrier rectifier with MOS trench

Silicon carbide power MOSFET with floating field ring and floating field plate

Silicon carbide field effect device

Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Method of fabricating high voltage silicon carbide MESFETs

Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Method of forming trenches in monocrystalline silicon carbide

High voltage silicon carbide MESFETs and methods of fabricating same

Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up

Silicon carbide field effect transistor

Method of fabricating silicon carbide field effect transistor

Schottky barrier rectifier including schottky barrier regions of differing barrier heights

Merged P-I-N/Schottky power rectifier having extended P-I-N junction

Bidirectional AC switching device with MOS-gated turn-on and turn-off control

Integrated circuit power device with external disabling of defective devices and method of fabricating same

Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same

Method for forming an oxide-filled trench in silicon carbide

Integrated circuit power device with automatic removal of defective devices and method of fabricating same