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Inventor
HAN JIAYIN
CN
2 patents
Patents
2 patents
US12136453B2
Nov 5, 2024
Systems, methods and media of optimization of temporary read errors in 3D NAND memory devices
YANGTZE MEMORY TECH CO LTD
0 citations
60
US12505890B2
Dec 23, 2025
Memories and operation methods thereof, memory systems and electronic devices
YANGTZE MEMORY TECH CO LTD
0 citations
47