P

Inventor

SHIROTA RIICHIRO

JP191 patents

Patents

50 patents
US8008732B2Aug 30, 2011

Semiconductor memory and method of manufacturing the same

TOSHIBA KK244 citations99
US7696559B2Apr 13, 2010

Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the same

TOSHIBA KK221 citations99
US7259992B2Aug 21, 2007

Semiconductor memory device with a memory cell array formed on a semiconductor substrate

TOSHIBA KK264 citations99
US6859394B2Feb 22, 2005

NAND type non-volatile semiconductor memory device

TOSHIBA KK140 citations99
US6845042B2Jan 18, 2005

Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems

TOSHIBA KK149 citations99
US6798698B2Sep 28, 2004

Nonvolatile semiconductor memory device

TOSHIBA KK106 citations99
US6549464B2Apr 15, 2003

Nonvolatile semiconductor memory device

TOSHIBA KK92 citations99
US6134140AOct 17, 2000

Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells

TOSHIBA KK262 citations99
US6014330AJan 11, 2000

Non-volatile semiconductor memory device

TOSHIBA KK120 citations99
US5946231AAug 31, 1999

Non-volatile semiconductor memory device

TOSHIBA KK129 citations99
US5774397AJun 30, 1998

Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state

TOSHIBA KK1,150 citations99
US5602789AFeb 11, 1997

Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

TOSHIBA KK284 citations99
US5555204ASep 10, 1996

Non-volatile semiconductor memory device

TOSHIBA KK203 citations99
US5469444ANov 21, 1995

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

TOSHIBA KK174 citations99
US5386422AJan 31, 1995

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

TOSHIBA KK293 citations99
US5321699AJun 14, 1994

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

TOSHIBA KK171 citations99
US4959812ASep 25, 1990

Electrically erasable programmable read-only memory with NAND cell structure

TOSHIBA KK652 citations99
US7498630B2Mar 3, 2009

Nonvolatile semiconductor memory

TOSHIBA KK52 citations98
US6493265B2Dec 10, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK96 citations98
US6252798B1Jun 26, 2001

Nonvolatile semiconductor memory device capable of controlling mutual timing of write voltage pulse and transfer voltage pulse

TOSHIBA KK140 citations98
US6151249ANov 21, 2000

NAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistors

TOSHIBA KK94 citations98
US4939690AJul 3, 1990

Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation

TOSHIBA KK142 citations98
US6208560B1Mar 27, 2001

Nonvolatile semiconductor memory device

TOSHIBA KK73 citations97
US5361227ANov 1, 1994

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK103 citations97
US7075284B2Jul 11, 2006

Time limit function utilization

TOSHIBA KK36 citations96
US6940752B2Sep 6, 2005

Nonvolatile semiconductor memory device

TOSHIBA KK23 citations96
US6925008B2Aug 2, 2005

Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors

TOSHIBA KK47 citations96
US6894341B2May 17, 2005

Semiconductor device and manufacturing method

TOSHIBA KK61 citations96
US6853029B2Feb 8, 2005

Non-volatile semiconductor memory device with multi-layer gate structure

TOSHIBA KK58 citations96
US6835978B2Dec 28, 2004

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK43 citations96
US6434055B2Aug 13, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK52 citations96
US6314026B1Nov 6, 2001

Nonvolatile semiconductor device using local self boost technique

TOSHIBA KK65 citations96
US6310374B1Oct 30, 2001

Nonvolatile semiconductor memory device having extracting electrode

TOSHIBA KK65 citations96
US6188611B1Feb 13, 2001

Non-volatile semiconductor memory device

TOSHIBA KK79 citations96
US6172911B1Jan 9, 2001

Non-volatile semiconductor memory device with an improved verify voltage generator

TOSHIBA KK54 citations96
US6034894AMar 7, 2000

Nonvolatile semiconductor storage device having buried electrode within shallow trench

TOSHIBA KK55 citations96
US5909399AJun 1, 1999

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK26 citations96
US5793696AAug 11, 1998

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK27 citations96
USRE35838EJul 7, 1998

Electrically erasable programmable read-only memory with NAND cell structure

TOSHIBA KK90 citations96
US5724300AMar 3, 1998

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK50 citations96
US5615165AMar 25, 1997

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK43 citations96
US5546351AAug 13, 1996

Non-volatile semiconductor memory device and memory system using the same

TOSHIBA KK65 citations96
US5528547AJun 18, 1996

Electrically erasable programmable read-only memory with electric field decreasing controller

TOSHIBA KK52 citations96
US5453955ASep 26, 1995

Non-volatile semiconductor memory device

TOSHIBA KK86 citations96
US5394372AFeb 28, 1995

Semiconductor memory device having charge-pump system with improved oscillation means

TOSHIBA KK52 citations96
US5293337AMar 8, 1994

Electrically erasable programmable read-only memory with electric field decreasing controller

TOSHIBA KK100 citations96
US5050125ASep 17, 1991

Electrically erasable programmable read-only memory with NAND cellstructure

TOSHIBA KK60 citations95
US8048741B2Nov 1, 2011

Semiconductor memory device and method of fabricating the same

TOSHIBA KK26 citations93
US7939406B2May 10, 2011

Nonvolatile semiconductor memory device having element isolating region of trench type

TOSHIBA KK9 citations93
US7875922B2Jan 25, 2011

Nonvolatile semiconductor memory and process of producing the same

TOSHIBA KK39 citations93

Showing the top 50 of 191 patents by PatentIndex Score.