Inventor · disambiguated record
Mohsen Banan
Also filed as: BANAN MOHSEN
19 granted patents·5 pending applications·472 citations·filing 1992–2007
95Inventor score
Top patents by PatentIndex Score
24 records- 0198US7217320B2Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faultsMEMC ELECTRONICS MATERIALS INC·Filed 2004·Granted May 15, 2007·180 cites·51 claims
- 0288US6846539B2Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jan 25, 2005·24 cites·30 claims
- 0387US6454851B1Method for preparing molten silicon melt from polycrystalline silicon chargeMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 24, 2002·29 cites·7 claims
- 0486US7404856B2Nitrogen-doped silicon substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Jul 29, 2008·6 cites·18 claims
- 0582US6312517B1Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski methodMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Nov 6, 2001·21 cites·8 claims
- 0680US7132091B2Single crystal silicon ingot having a high arsenic concentrationMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 7, 2006·20 cites·6 claims
- 0777US6554898B2Crystal puller for growing monocrystalline silicon ingotsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Apr 29, 2003·14 cites·8 claims
- 0877US6171391B1Method and system for controlling growth of a silicon crystalMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jan 9, 2001·40 cites·18 claims
- 0977US5445679ACleaning of polycrystalline silicon for charging into a Czochralski growing processMEMC ELECTRONIC MATERIALS·Filed 1992·Granted Aug 29, 1995·34 cites·21 claims
- 1073US7182809B2Nitrogen-doped silicon substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 27, 2007·10 cites·38 claims
- 1173US6808781B2Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the sameMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 26, 2004·19 cites·48 claims
- 1272US6858307B2Method for the production of low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 22, 2005·3 cites·27 claims
- 1370US7201800B2Process for making silicon wafers with stabilized oxygen precipitate nucleation centersMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Apr 10, 2007·15 cites·28 claims
- 1470US6579362B2Heat shield assembly for crystal pullerMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 17, 2003·9 cites·14 claims
- 1566US6663709B2Crystal puller and method for growing monocrystalline silicon ingotsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Dec 16, 2003·6 cites·11 claims
- 1666US5676751ARapid cooling of CZ silicon crystal growth systemMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Oct 14, 1997·18 cites·20 claims
- 1765US5753567ACleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasmaMEMC ELECTRONIC MATERIALS·Filed 1995·Granted May 19, 1998·24 cites·30 claims
- 1850US7105050B2Method for the production of low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Sep 12, 2006·0 cites·36 claims
- 1944US2007074653A1Apparatus for preparation of silicon crystals with reduced metal contentMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 2040US6866713B2Seed crystals for pulling single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Mar 15, 2005·0 cites·14 claims
- 2139US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 2238US2002144642A1Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defectsFiled 2001·Application pending·0 cites
- 2334US2002084451A1Silicon wafers substantially free of oxidation induced stacking faultsFiled 2001·Application pending·0 cites
- 2434US2002124792A1Crystal puller and method for growing single crystal semiconductor materialFiled 2001·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →