Inventor
CHEN WEI-BARN
TW11 patents
Patents
11 patentsUS9209304B2Dec 8, 2015
N/P MOS FinFET performance enhancement by specific orientation surface
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11309423B2Apr 19, 2022
Fin field effect transistor (finFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10276720B2Apr 30, 2019
Method for forming fin field effect transistor (FINFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11949014B2Apr 2, 2024
Fin field effect transistor (FinFet) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10957695B2Mar 23, 2021
Asymmetric gate pitch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12009262B2Jun 11, 2024
Semiconductor device having planar transistor and FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11328958B2May 10, 2022
Semiconductor device having planar transistor and FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10475790B2Nov 12, 2019
Asymmetric gate pitch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10818555B2Oct 27, 2020
Semiconductor device having planar transistor and FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10483167B2Nov 19, 2019
Method for manufacturing dual FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9859129B2Jan 2, 2018
Semiconductor device and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48