P

Inventor

EMA TAIJI

JP171 patents
⚠️ This page may combine multiple inventors who share the name “EMA TAIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJITSU LTD

43 patents
US7323754B2Jan 29, 2008

Semiconductor device and its manufacture method

FUJITSU LTD128 citations99
US5874756AFeb 23, 1999

Semiconductor storage device and method for fabricating the same

FUJITSU LTD111 citations97
US6297541B1Oct 2, 2001

Semiconductor device and method for fabricating the same

FUJITSU LTD42 citations96
US5539224AJul 23, 1996

Semiconductor device having unit circuit-blocks in a common chip as a first layer with electrical interconnections therebetween provided exclusively in a second, upper, interconnection layer formed on the first layer

FUJITSU LTD63 citations96
US5521859AMay 28, 1996

Semiconductor memory device having thin film transistor and method of producing the same

FUJITSU LTD93 citations96
US5071783ADec 10, 1991

Method of producing a dynamic random access memory device

FUJITSU LTD64 citations96
US4974040ANov 27, 1990

Dynamic random access memory device and method of producing same

FUJITSU LTD54 citations96
US4953126AAug 28, 1990

Dynamic random access memory device including a stack capacitor

FUJITSU LTD31 citations96
US5789788AAug 4, 1998

Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells

FUJITSU LTD53 citations95
US6333545B1Dec 25, 2001

Semiconductor device having blocking layer and fuses

FUJITSU LTD18 citations93
US6300655B1Oct 9, 2001

Semiconductor memory of good retention and its manufacture

FUJITSU LTD28 citations93
US6026010AFeb 15, 2000

Semiconductor memory device with bit line contact areas and storage capacitor contact areas

FUJITSU LTD35 citations93
US5972757AOct 26, 1999

Method of forming a self aligned through-hole on a diffused layer

FUJITSU LTD22 citations93
US5763910AJun 9, 1998

Semiconductor device having a through-hole formed on diffused layer by self-alignment

FUJITSU LTD26 citations93
US5610854AMar 11, 1997

Semiconductor memory device and fabrication process thereof

FUJITSU LTD21 citations93
US5572053ANov 5, 1996

Dynamic random access memory cell having a stacked capacitor

FUJITSU LTD30 citations93
US5561623AOct 1, 1996

High speed DRAM with novel wiring structure

FUJITSU LTD33 citations93
US5396451AMar 7, 1995

DRAM device having cells staggered along adjacent rows and sources and drains aligned in a column direction

FUJITSU LTD39 citations93
US5274599ADec 28, 1993

Flash-type nonvolatile semiconductor memory having precise erasing levels

FUJITSU LTD29 citations93
US5247197ASep 21, 1993

Dynamic random access memory device having improved contact hole structures

FUJITSU LTD24 citations93
US5128273AJul 7, 1992

Method of making a dynamic random access memory cell with stacked capacitor

FUJITSU LTD30 citations93
US5021357AJun 4, 1991

Method of making a dram cell with stacked capacitor

FUJITSU LTD36 citations93
US5014104AMay 7, 1991

Semiconductor integrated circuit having CMOS inverters

FUJITSU LTD28 citations93
US5014103AMay 7, 1991

Dynamic random access memory having improved layout and method of arranging memory cell pattern of the dynamic random access memory

FUJITSU LTD31 citations93
US4977102ADec 11, 1990

Method of producing layer structure of a memory cell for a dynamic random access memory device

FUJITSU LTD27 citations93
US4975753ADec 4, 1990

Semiconductor memory device having an aluminum-based metallization film and a refractory metal silicide-based metallization film

FUJITSU LTD38 citations93
US4961165AOct 2, 1990

Semiconductor memory device having a charge barrier layer for preventing soft error

FUJITSU LTD23 citations93
US4931845AJun 5, 1990

Semiconductor memory device having an ohmic contact between an aluminum-silicon alloy metallization film and a silicon substrate

FUJITSU LTD23 citations93
US4910566AMar 20, 1990

Layer structure of a memory cell for a dynamic random access memory device and method for producing the same

FUJITSU LTD24 citations93
US6791187B2Sep 14, 2004

Semiconductor storage device and method for fabricating the same

FUJITSU LTD14 citations92
US6744091B1Jun 1, 2004

Semiconductor storage device with self-aligned opening and method for fabricating the same

FUJITSU LTD17 citations92
US6583458B1Jun 24, 2003

Semiconductor integrated circuit including a DRAM and an analog circuit

FUJITSU LTD14 citations92
US6093943AJul 25, 2000

Semiconductor device and method of producing the same

FUJITSU LTD24 citations92
US5591659AJan 7, 1997

Process of producing a semiconductor device in which a height difference between a memory cell area and a peripheral area is eliminated

FUJITSU LTD27 citations92
US5525534AJun 11, 1996

Method of producing a semiconductor device using a reticle having a polygonal shaped hole

FUJITSU LTD29 citations92
US4737471AApr 12, 1988

Method for fabricating an insulated-gate FET having a narrow channel width

FUJITSU LTD41 citations92
US6529397B2Mar 4, 2003

Memory-logic semiconductor device

FUJITSU LTD44 citations91
US6326254B1Dec 4, 2001

Method of manufacturing semiconductor device

FUJITSU LTD17 citations91
US5780907AJul 14, 1998

Semiconductor device having triple wells

FUJITSU LTD20 citations91
US4905064AFeb 27, 1990

Semiconductor memory device having stacked-capacitor type memory cells

FUJITSU LTD36 citations91
US7414292B2Aug 19, 2008

Semiconductor device and its manufacturing method

FUJITSU LTD27 citations90
US6291846B1Sep 18, 2001

DRAM semiconductor device including oblique area in active regions and its manufacture

FUJITSU LTD37 citations89
US7445989B2Nov 4, 2008

Semiconductor device and method of manufacturing the same

FUJITSU LTD11 citations84

FUJITSU SEMICONDUCTOR LTD

3 patents

FUJITSU MICROELECTRONICS LTD

2 patents

SUVOLTA INC

1 patent

EMA TAIJI

1 patent

Showing the top 50 of 171 patents by PatentIndex Score.