Inventor

MIURA YOSHIKI

JP19 patents

⚠️ This page may combine multiple inventors who share the name “MIURA YOSHIKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIURA YOSHIKI

SUMITOMO ELECTRIC INDUSTRIES

Light emitting device, wafer for light emitting device, and method of preparing the same

Light emitting device, wafer for light emitting device, and method of preparing the same

GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate

Process for vapor phase epitaxy of compound semiconductor

Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same

Compound semiconductor light emitting device and method of preparing the same

Compound semiconductor wafer with defects propagating prevention means

Epitaxial wafer and method of preparing the same

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

Method of making group III-V compound semiconductor wafer

Epitaxial wafer and method of preparing the same

Compound semiconductor light emitting device and method of preparing the same

Semiconductor light-emitting element and substrate used in formation of the same

Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer

Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride

Gallium nitride substrate and gallium nitride layer formation method

Gallium nitride baseplate and epitaxial substrate

KASAI HITOSHI

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

NAKANISHI FUMITAKE

Method of manufacturing GaN substrate, method of manufacturing epitaxialwafer, method of manufacturing semiconductor device and epitaxialwafer