Inventor
DEBROSSE JOHN KENNETH
US11 patents
Patents
11 patentsUS7376006B2May 20, 2008
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
IBM138 citations97
US6490217B1Dec 3, 2002
Select line architecture for magnetic random access memories
IBM108 citations97
US6946882B2Sep 20, 2005
Current sense amplifier
IBM61 citations96
US6944049B2Sep 13, 2005
Magnetic tunnel junction memory cell architecture
IBM31 citations92
US10726897B1Jul 28, 2020
Trimming MRAM sense amp with offset cancellation
IBM17 citations84
US10741232B1Aug 11, 2020
Tunable reference system with sense amplifier offset cancellation for magnetic random access memory
IBM9 citations81
US5804853ASep 8, 1998
Stacked electrical device having regions of electrical isolation and electrical connections on a given stack level
IBM10 citations73
US7192787B2Mar 20, 2007
Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories
IBM2 citations62
US6930915B2Aug 16, 2005
Cross-point MRAM array with reduced voltage drop across MTJ's
IBM5 citations62
US12020736B2Jun 25, 2024
Spin-orbit-torque magnetoresistive random-access memory array
IBM0 citations52
US11037645B2Jun 15, 2021
Dynamic boosting techniques for memory
IBM0 citations49