Inventor
MACCARRONE MARCO
IT42 patents
⚠️ This page may combine multiple inventors who share the name “MACCARRONE MARCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
23 patentsUS5493531AFeb 20, 1996
Integrated circuitry for checking the utilization rate of redundancy memory elements in a semiconductor memory device
ST MICROELECTRONICS SRL34 citations93
US6507183B1Jan 14, 2003
Method and a device for measuring an analog voltage in a non-volatile memory
ST MICROELECTRONICS SRL19 citations92
US6266222B1Jul 24, 2001
ESD protection network for circuit structures formed in a semiconductor
ST MICROELECTRONICS SRL29 citations92
US6031761AFeb 29, 2000
Switching circuit having an output voltage varying between a reference voltage and a negative voltage
ST MICROELECTRONICS SRL38 citations92
US5955873ASep 21, 1999
Band-gap reference voltage generator
ST MICROELECTRONICS SRL54 citations92
US5659509AAug 19, 1997
Method for programming redundancy registers in a row redundancy integrated circuitry for a semiconductor memory device, and row redundancy integrated circuitry
ST MICROELECTRONICS SRL28 citations92
US5650671AJul 22, 1997
Charge pump circuit
ST MICROELECTRONICS SRL34 citations92
US5600594AFeb 4, 1997
Threshold voltage measuring device for memory cells
ST MICROELECTRONICS SRL23 citations92
US5563826AOct 8, 1996
Memory array cell reading circuit with extra current branch
ST MICROELECTRONICS SRL22 citations92
US5519656AMay 21, 1996
Voltage regulator for programming non-volatile and electrically programmable memory cells
ST MICROELECTRONICS SRL37 citations92
US6392936B1May 21, 2002
Method and apparatus for generating from a single supply line voltages internal to a flash memory with reduced settling times
ST MICROELECTRONICS SRL7 citations74
US6157579ADec 5, 2000
Circuit for providing a reading phase after power-on-reset
ST MICROELECTRONICS SRL12 citations74
US5708601AJan 13, 1998
Integrated circuitry for checking the utilization rate of redundancy memory elements in a semiconductor memory device
ST MICROELECTRONICS SRL10 citations74
US6157225ADec 5, 2000
Driving circuit with three output levels, one output level being a boosted level
ST MICROELECTRONICS SRL3 citations63
US5687135ANov 11, 1997
Count unit for nonvolatile memories
ST MICROELECTRONICS SRL6 citations63
US5600600AFeb 4, 1997
Method for programming and testing a nonvolatile memory
ST MICROELECTRONICS SRL5 citations63
US5541884AJul 30, 1996
Method and circuit for suppressing data loading noise in nonvolatile memories
ST MICROELECTRONICS SRL2 citations63
US5532972AJul 2, 1996
Method and circuit for timing the reading of nonvolatile memories
ST MICROELECTRONICS SRL5 citations63
US5515332AMay 7, 1996
Method and circuit for timing the loading of nonvolatile-memory output data
ST MICROELECTRONICS SRL4 citations63
US6204722B1Mar 20, 2001
Electronic circuit for generating a stable voltage signal for polarizing during a reading step UPROM memory cells operating at low feed voltage
ST MICROELECTRONICS SRL2 citations62
US6075750AJun 13, 2000
Method and circuit for generating an ATD signal to regulate the access to a non-volatile memory
ST MICROELECTRONICS SRL4 citations62
US6208705B1Mar 27, 2001
Electronic counter for a non-volatile memory device integrated on a semiconductor
ST MICROELECTRONICS SRL5 citations60
US5717698AFeb 10, 1998
Method and apparatus for testing a network with a programmable logic matrix
ST MICROELECTRONICS SRL1 citations52
SGS THOMSON MICROELECTRONICS
9 patentsUS5805500ASep 8, 1998
Circuit and method for generating a read reference signal for nonvolatile memory cells
SGS THOMSON MICROELECTRONICS85 citations96
US5886925AMar 23, 1999
Read circuit and method for nonvolatile memory cells with an equalizing structure
SGS THOMSON MICROELECTRONICS38 citations93
US5548554AAug 20, 1996
Integrated programming circuitry for an electrically programmable semiconductor memory device with redundancy
SGS THOMSON MICROELECTRONICS30 citations92
US5594703AJan 14, 1997
End-of-count detecting device for nonvolatile memories
SGS THOMSON MICROELECTRONICS6 citations74
US5929674AJul 27, 1999
Power on reset circuit with auto turn off
SGS THOMSON MICROELECTRONICS13 citations73
US5859797AJan 12, 1999
Biasing circuit for UPROM cells with low voltage supply
SGS THOMSON MICROELECTRONICS13 citations73
US5546054AAug 13, 1996
Current source having voltage stabilizing element
SGS THOMSON MICROELECTRONICS13 citations71
US5499217AMar 12, 1996
Bias circuit for a memory line decoder driver of nonvolatile memories
SGS THOMSON MICROELECTRONICS7 citations71
US5822259AOct 13, 1998
UPROM cell for low voltage supply
SGS THOMSON MICROELECTRONICS4 citations62
MICRON TECHNOLOGY INC
7 patentsUS9281064B2Mar 8, 2016
Fast programming memory device
MICRON TECHNOLOGY INC4 citations83
US8982627B2Mar 17, 2015
Fast programming memory device
MICRON TECHNOLOGY INC4 citations83
US9632730B2Apr 25, 2017
Fast programming memory device
MICRON TECHNOLOGY INC2 citations72
US8386895B2Feb 26, 2013
Enhanced multilevel memory
MICRON TECHNOLOGY INC2 citations60
US9984756B2May 29, 2018
Fast programming memory device
MICRON TECHNOLOGY INC0 citations51
US9779821B2Oct 3, 2017
Fast programming memory device
MICRON TECHNOLOGY INC0 citations51
US8700978B2Apr 15, 2014
Enhanced multilevel memory
MICRON TECHNOLOGY INC0 citations50