Inventor

KALITSOV ALAN

US30 patents

⚠️ This page may combine multiple inventors who share the name “KALITSOV ALAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KALITSOV ALAN

WESTERN DIGITAL TECH INC

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Magnetoresistive memory device including a plurality of reference layers

Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same

Tunneling metamagnetic resistance memory device and methods of operating the same

Tunneling metamagnetic resistance memory device and methods of operating the same

Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof

Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same

Magnetic device including multiferroic regions and methods of forming the same

Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recording

Dual cap layers for heat-assisted magnetic recording media

SANDISK TECHNOLOGIES LLC

Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same

Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Ferroelectric device with multiple polarization states and method of making the same

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same

Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same

Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling

Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy

Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling

SANDISK TECHNOLOGIES INC

Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer

CALIFORNIA STATE UNIV NORTHRIDGE

Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction