P

Inventor

FENIGSTEIN AMOS

IL30 patents
⚠️ This page may combine multiple inventors who share the name “FENIGSTEIN AMOS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOWER SEMICONDUCTOR LTD

24 patents
US7227234B2Jun 5, 2007

Embedded non-volatile memory cell with charge-trapping sidewall spacers

TOWER SEMICONDUCTOR LTD58 citations96
US9935618B1Apr 3, 2018

Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants

TOWER SEMICONDUCTOR LTD22 citations94
US7358583B2Apr 15, 2008

Via wave guide with curved light concentrator for image sensing devices

TOWER SEMICONDUCTOR LTD67 citations93
US10852399B2Dec 1, 2020

Active quenching for single-photon avalanche diode using one- shot circuit

TOWER SEMICONDUCTOR LTD8 citations82
US9729808B2Aug 8, 2017

Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier

TOWER SEMICONDUCTOR LTD7 citations81
US9106851B2Aug 11, 2015

Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier

TOWER SEMICONDUCTOR LTD13 citations81
US7608837B2Oct 27, 2009

High resolution integrated X-ray CMOS image sensor

TOWER SEMICONDUCTOR LTD13 citations81
US7400538B2Jul 15, 2008

NROM memory device with enhanced endurance

TOWER SEMICONDUCTOR LTD8 citations73
US9865640B2Jan 9, 2018

Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS

TOWER SEMICONDUCTOR LTD2 citations72
US9729810B2Aug 8, 2017

Image sensor pixel with memory node having buried channel and diode portions

TOWER SEMICONDUCTOR LTD2 citations72
US7754564B2Jul 13, 2010

Method for fabricating three-dimensional control-gate architecture for single poly EPROM memory devices in planar CMOS technology

TOWER SEMICONDUCTOR LTD7 citations71
US7671396B2Mar 2, 2010

Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology

TOWER SEMICONDUCTOR LTD7 citations70
US9741817B2Aug 22, 2017

Method for manufacturing a trench metal insulator metal capacitor

TOWER SEMICONDUCTOR LTD5 citations65
US7482233B2Jan 27, 2009

Embedded non-volatile memory cell with charge-trapping sidewall spacers

TOWER SEMICONDUCTOR LTD3 citations63
US9210345B2Dec 8, 2015

Shared readout low noise global shutter image sensor method

TOWER SEMICONDUCTOR LTD2 citations62
US9160956B2Oct 13, 2015

Shared readout low noise global shutter image sensor

TOWER SEMICONDUCTOR LTD2 citations62
US7754559B2Jul 13, 2010

Method for fabricating capacitor structures using the first contact metal

TOWER SEMICONDUCTOR LTD4 citations60
US11592584B1Feb 28, 2023

Wavelength selective radiation sensor

TOWER SEMICONDUCTOR LTD0 citations52
US9356169B2May 31, 2016

Apparatus, system and method of back side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) pixel array

TOWER SEMICONDUCTOR LTD0 citations51
US10210526B2Feb 19, 2019

Image sensor module and a method for evaluating an image sensor

TOWER SEMICONDUCTOR LTD0 citations44
US7678603B2Mar 16, 2010

Via wave guide with curved light concentrator for image sensing devices

TOWER SEMICONDUCTOR LTD0 citations43
US9865632B2Jan 9, 2018

Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate

TOWER SEMICONDUCTOR LTD0 citations41
US9431455B2Aug 30, 2016

Back-end processing using low-moisture content oxide cap layer

TOWER SEMICONDUCTOR LTD0 citations41
US10757355B2Aug 25, 2020

Image sensor module and a method for sensing

TOWER SEMICONDUCTOR LTD0 citations39

LAHAV ASSAF

2 patents

RESHEF RAZ

1 patent

NEMIROVSKY YAEL

1 patent

ROIZIN YAKOV

1 patent

LISIANSKY MICHAEL

1 patent