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Inventor

BECKER DAVID S

US43 patents
⚠️ This page may combine multiple inventors who share the name “BECKER DAVID S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

39 patents
US6784108B1Aug 31, 2004

Gas pulsing for etch profile control

MICRON TECHNOLOGY INC567 citations99
US7049244B2May 23, 2006

Method for enhancing silicon dioxide to silicon nitride selectivity

MICRON TECHNOLOGY INC63 citations97
US5286344AFeb 15, 1994

Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride

MICRON TECHNOLOGY INC207 citations96
US7163641B2Jan 16, 2007

Method of forming high aspect ratio apertures

MICRON TECHNOLOGY INC16 citations93
US6890863B1May 10, 2005

Etchant and method of use

MICRON TECHNOLOGY INC26 citations93
US6331495B1Dec 18, 2001

Semiconductor structure useful in a self-aligned contact etch and method for making same

MICRON TECHNOLOGY INC16 citations93
US6277759B1Aug 21, 2001

Plasma etching methods

MICRON TECHNOLOGY INC16 citations93
US6123862ASep 26, 2000

Method of forming high aspect ratio apertures

MICRON TECHNOLOGY INC28 citations93
US6018184AJan 25, 2000

Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness

MICRON TECHNOLOGY INC30 citations93
US5899749AMay 4, 1999

In situ etch process for insulating and conductive materials

MICRON TECHNOLOGY INC23 citations93
US5880036AMar 9, 1999

Method for enhancing oxide to nitride selectivity through the use of independent heat control

MICRON TECHNOLOGY INC19 citations93
US5869403AFeb 9, 1999

Semiconductor processing methods of forming a contact opening to a semiconductor substrate

MICRON TECHNOLOGY INC22 citations93
US5770498AJun 23, 1998

Process for forming a diffusion barrier using an insulating spacer layer

MICRON TECHNOLOGY INC24 citations93
US5691246ANov 25, 1997

In situ etch process for insulating and conductive materials

MICRON TECHNOLOGY INC26 citations93
US5498570AMar 12, 1996

Method of reducing overetch during the formation of a semiconductor device

MICRON TECHNOLOGY INC19 citations93
US5094712AMar 10, 1992

One chamber in-situ etch process for oxide and conductive material

MICRON TECHNOLOGY INC107 citations93
US6287978B1Sep 11, 2001

Method of etching a substrate

MICRON TECHNOLOGY INC20 citations92
US6080672AJun 27, 2000

Self-aligned contact formation for semiconductor devices

MICRON TECHNOLOGY INC19 citations92
US6015760AJan 18, 2000

Method for enhancing oxide to nitride selectivity through the use of independent heat control

MICRON TECHNOLOGY INC20 citations92
US6342165B1Jan 29, 2002

Method of forming high aspect ratio apertures

MICRON TECHNOLOGY INC13 citations82
US7074724B2Jul 11, 2006

Etchant and method of use

MICRON TECHNOLOGY INC8 citations74
US6610212B2Aug 26, 2003

Method of forming high aspect ratio apertures

MICRON TECHNOLOGY INC9 citations74
US6492279B1Dec 10, 2002

Plasma etching methods

MICRON TECHNOLOGY INC7 citations74
US6239455B1May 29, 2001

Fuse structures

MICRON TECHNOLOGY INC8 citations74
US6207571B1Mar 27, 2001

Self-aligned contact formation for semiconductor devices

MICRON TECHNOLOGY INC13 citations74
US6153501ANov 28, 2000

Method of reducing overetch during the formation of a semiconductor device

MICRON TECHNOLOGY INC8 citations74
US5994237ANov 30, 1999

Semiconductor processing methods of forming a contact opening to a semiconductor substrate

MICRON TECHNOLOGY INC13 citations74
US5895262AApr 20, 1999

Methods for etching fuse openings in a semiconductor device

MICRON TECHNOLOGY INC12 citations74
US5756216AMay 26, 1998

Highly selective nitride spacer etch

MICRON TECHNOLOGY INC15 citations74
US5753565AMay 19, 1998

Method of reducing overetch during the formation of a semiconductor device

MICRON TECHNOLOGY INC15 citations74
US5700580ADec 23, 1997

Highly selective nitride spacer etch

MICRON TECHNOLOGY INC11 citations74
US6051501AApr 18, 2000

Method of reducing overetch during the formation of a semiconductor device

MICRON TECHNOLOGY INC13 citations73
US7183220B1Feb 27, 2007

Plasma etching methods

MICRON TECHNOLOGY INC3 citations63
US6759320B2Jul 6, 2004

Method of reducing overetch during the formation of a semiconductor device

MICRON TECHNOLOGY INC1 citations63
US6436844B2Aug 20, 2002

Semiconductor structure useful in a self-aligned contact etch and method for making same

MICRON TECHNOLOGY INC2 citations63
US6107178AAug 22, 2000

Methods for etching fuse openings in a semiconductor device

MICRON TECHNOLOGY INC2 citations63
US7608196B2Oct 27, 2009

Method of forming high aspect ratio apertures

MICRON TECHNOLOGY INC0 citations52
US6958297B2Oct 25, 2005

Plasma etching methods

MICRON TECHNOLOGY INC0 citations52
US6812154B2Nov 2, 2004

Plasma etching methods

MICRON TECHNOLOGY INC0 citations52

MICRON SEMICONDUCTOR INC

1 patent

MELHORN J MICHAEL

1 patent

MICRON TECHNOLOGY LNC

1 patent

EIG SERVICES INC

1 patent