Inventor
LIN HENGYANG
US11 patents
Patents
11 patentsUS7239558B1Jul 3, 2007
Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycle
NAT SEMICONDUCTOR CORP28 citations92
US7167392B1Jan 23, 2007
Non-volatile memory cell with improved programming technique
NAT SEMICONDUCTOR CORP35 citations92
US6563730B1May 13, 2003
Low power static RAM architecture
NAT SEMICONDUCTOR CORP35 citations92
US7164606B1Jan 16, 2007
Reverse fowler-nordheim tunneling programming for non-volatile memory cell
NAT SEMICONDUCTOR CORP17 citations83
US6618282B1Sep 9, 2003
High density ROM architecture with inversion of programming
NAT SEMICONDUCTOR CORP14 citations80
US7126866B1Oct 24, 2006
Low power ROM architecture
NAT SEMICONDUCTOR CORP10 citations72
US6642587B1Nov 4, 2003
High density ROM architecture
NAT SEMICONDUCTOR CORP10 citations72
US7863644B1Jan 4, 2011
Bipolar transistor and method of forming the bipolar transistor with a backside contact
NAT SEMICONDUCTOR CORP2 citations62
US7061792B1Jun 13, 2006
Low AC power SRAM architecture
NAT SEMICONDUCTOR CORP2 citations62
US7286383B1Oct 23, 2007
Bit line sharing and word line load reduction for low AC power SRAM architecture
NAT SEMICONDUCTOR CORP6 citations58
US7188044B1Mar 6, 2007
World-wide distributed testing for integrated circuits
NAT SEMICONDUCTOR CORP1 citations51