Inventor
YOO SUNGWON
KR21 patents
Patents
21 patentsUS11917805B2Feb 27, 2024
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11887986B2Jan 30, 2024
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US12191136B2Jan 7, 2025
Semiconductor devices including semiconductor pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US11729974B2Aug 15, 2023
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US11670679B2Jun 6, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581316B2Feb 14, 2023
Semiconductor devices including semiconductor pattern
SAMSUNG ELECTRONICS CO LTD1 citations62
US12408324B2Sep 2, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations60
US12166132B2Dec 10, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11557720B2Jan 17, 2023
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12543305B2Feb 3, 2026
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations56
US12317504B2May 27, 2025
Semiconductor memory device including vertical cell structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12193343B2Jan 7, 2025
Vertical variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US12029029B2Jul 2, 2024
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11943925B2Mar 26, 2024
Semiconductor memory device having charge storage pattern
SAMSUNG ELECTRONICS CO LTD0 citations51
US11887648B2Jan 30, 2024
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11621264B2Apr 4, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11508730B2Nov 22, 2022
Memory devices with vertical channels
SAMSUNG ELECTRONICS CO LTD0 citations51
US12464770B2Nov 4, 2025
Semiconductor devices having vertical channel transistor structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12213302B2Jan 28, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12408382B2Sep 2, 2025
Semiconductor memory device having a confinement layer with a two-dimensional electron gas in the confinement layer
SAMSUNG ELECTRONICS CO LTD0 citations47
US12402301B2Aug 26, 2025
Semiconductor memory device having shield layer between peripheral circuit and cell array structures
SAMSUNG ELECTRONICS CO LTD0 citations47