Inventor

KUBO MINORU

JP41 patents

⚠️ This page may combine multiple inventors who share the name “KUBO MINORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUBO MINORU

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

FET having a Si/SiGeC heterojunction channel

Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer

Semiconductor crystal film and method for preparation thereof

Semiconductor devices and method for manufacturing the same

SiGeC-based CMOSFET with separate heterojunctions

Semiconductor device and method for fabricating the same

Semiconductor light-emitting device and production method thereof

Heterojunction bipolar transistor

Apparatus for fabricating semiconductor device and fabrication method therefor

Semiconductor light-emitting device and production method thereof

Fabrication of semiconductor light-emitting device

Semiconductor light-emitting device and production method thereof

Semiconductor-based encapsulated infrared sensor and electronic device

Electronic device and method for manufacturing the same

Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon

SiGeC semiconductor crystal and production method thereof

Semiconductor crystal, fabrication method thereof, and semiconductor device

Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method

Method of laser enhanced vapor phase growth for compound semiconductor

Semiconductor device

Method for fabricating semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor devices and method for manufacturing the same

Semiconductor device and method for fabricating the same

Method for cleaning substrate and method for producing semiconductor device

Semiconductor device and method for fabricating the same

Lateral heterojunction bipolar transistor and method of fabricating the same

Structure evaluation method, method for manufacturing semiconductor devices, and recording medium

SiGeC semiconductor crystals and the method producing the same

Lateral heterojunction bipolar transistor and method of fabricating the same

Semiconductor laser

Light-emitting device with II-VI compounds

Method for molecular-beam epitaxial growth

Heterojunction bipolar transistor having reduced driving voltage requirements

Production method for semiconductor crystal

Method for epitaxially growing a II-VI compound semiconductor

Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer

Semiconductor device and method for fabricating the same

Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon

Liquid phase epitaxial growth method

SONY CORP

Optical head and recording and/or reproducing apparatus employing same