Inventor

MIN YO SEP

KR32 patents

⚠️ This page may combine multiple inventors who share the name “MIN YO SEP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIN YO SEP

SAMSUNG ELECTRONICS CO LTD

Method of manufacturing inorganic nanotube

Method for forming bismuth titanium silicon oxide thin film

Chemical vapor deposition method using alcohol for forming metal oxide thin film

Vertical carbon nanotube-field effect transistor and method of manufacturing the same

Atomic layer deposition using organometallic complex with β-diketone ligand

Atomic layer deposition method using a novel group IV metal precursor

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

Method of manufacturing a memory device having improved erasing characteristics

Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor

Deposition method of a dielectric layer

Rewritable data storage using carbonaceous material and writing/reading method thereof

Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof

N-type carbon nanotube field effect transistor and method of fabricating the same

N-type carbon nanotube field effect transistor and method of fabricating the same

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film

Group IV metal precursors and a method of chemical vapor deposition using the same

Memory device having nanocrystals in memory cell

Amorphous high-k thin film and manufacturing method thereof

Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same

Method of growing single-walled carbon nanotubes

Method for manufacturing zinc oxide nanowires and device having the same

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film

Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same

Method of forming nitrogen-doped single-walled carbon nanotubes

Thin film including multi components and method of forming the same

Method of removing carbonaceous impurities in carbon nanotubes

Amorphous dielectric thin film and manufacturing method thereof

Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor

MIN YO-SEP

Field emission electrode, method of manufacturing the same, and field emission device comprising the same

Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls

UNIV KONKUK IND COOP CORP

MoS2 thin film and method for manufacturing same

LEE JUNG-HYUN

Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same