P

Inventor

LEE JUNG HYUN

KR216 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

28 patents
US7164147B2Jan 16, 2007

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD183 citations99
US7005391B2Feb 28, 2006

Method of manufacturing inorganic nanotube

SAMSUNG ELECTRONICS CO LTD521 citations99
USD622235SAug 24, 2010

TV set

SAMSUNG ELECTRONICS CO LTD56 citations98
USD619979SJul 20, 2010

LED television set

SAMSUNG ELECTRONICS CO LTD56 citations98
US7371429B2May 13, 2008

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

SAMSUNG ELECTRONICS CO LTD52 citations96
US6443222B1Sep 3, 2002

Cooling device using capillary pumped loop

SAMSUNG ELECTRONICS CO LTD67 citations94
USD643389SAug 16, 2011

LED television receiver

SAMSUNG ELECTRONICS CO LTD35 citations93
USD624035SSep 21, 2010

TV set

SAMSUNG ELECTRONICS CO LTD31 citations93
US7728172B2Jun 1, 2010

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

SAMSUNG ELECTRONICS CO LTD33 citations93
US7718988B2May 18, 2010

Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD27 citations93
US6542297B1Apr 1, 2003

Half mirror varying apparatus for three-dimensional image displaying apparatus

SAMSUNG ELECTRONICS CO LTD27 citations93
US7935641B2May 3, 2011

Thin film etching method

SAMSUNG ELECTRONICS CO LTD40 citations92
US7892917B2Feb 22, 2011

Method for forming bismuth titanium silicon oxide thin film

SAMSUNG ELECTRONICS CO LTD18 citations92
US7820996B2Oct 26, 2010

Nonvolatile memory device made of resistance material and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations92
US7135207B2Nov 14, 2006

Chemical vapor deposition method using alcohol for forming metal oxide thin film

SAMSUNG ELECTRONICS CO LTD36 citations92
US6752869B2Jun 22, 2004

Atomic layer deposition using organometallic complex with β-diketone ligand

SAMSUNG ELECTRONICS CO LTD27 citations92
US6669990B2Dec 30, 2003

Atomic layer deposition method using a novel group IV metal precursor

SAMSUNG ELECTRONICS CO LTD20 citations92
US7410913B2Aug 12, 2008

Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO

SAMSUNG ELECTRONICS CO LTD33 citations90
US9410247B2Aug 9, 2016

Chemical vapor deposition apparatus

SAMSUNG ELECTRONICS CO LTD16 citations84
US7714313B2May 11, 2010

Resistive RAM having at least one varistor and methods of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7477709B2Jan 13, 2009

Device and method for data reproduction

SAMSUNG ELECTRONICS CO LTD9 citations84
US7420256B2Sep 2, 2008

Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD18 citations84
US7030450B2Apr 18, 2006

Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor

SAMSUNG ELECTRONICS CO LTD12 citations84
US6911402B2Jun 28, 2005

Deposition method of a dielectric layer

SAMSUNG ELECTRONICS CO LTD19 citations84
US7518007B2Apr 14, 2009

Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer

SAMSUNG ELECTRONICS CO LTD18 citations83
US7396719B2Jul 8, 2008

Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

SAMSUNG ELECTRONICS CO LTD18 citations83
US7153786B2Dec 26, 2006

Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same

SAMSUNG ELECTRONICS CO LTD14 citations83
US9318573B2Apr 19, 2016

Field effect transistor having germanium nanorod and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations82

LEE JUNG-HYUN

6 patents

KIM JI HEA

5 patents

SAMSUNG ELECTRO MECH

5 patents

(unassigned)

1 patent

HWANG KYUNG EUN

1 patent

SAMSUNG ELECTRONICS CO LETD

1 patent

POSTECH FOUNDATION

1 patent

WENXU XIANYU

1 patent

KOREA ELECTRONICS TELECOMM

1 patent

Showing the top 50 of 216 patents by PatentIndex Score.