P

Inventor

TAYLOR JR WILLIAM J

US48 patents
⚠️ This page may combine multiple inventors who share the name “TAYLOR JR WILLIAM J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

16 patents
US8889500B1Nov 18, 2014

Methods of forming stressed fin channel structures for FinFET semiconductor devices

GLOBALFOUNDRIES INC28 citations92
US8728885B1May 20, 2014

Methods of forming a three-dimensional semiconductor device with a nanowire channel structure

GLOBALFOUNDRIES INC31 citations92
US9362403B2Jun 7, 2016

Buried fin contact structures on FinFET semiconductor devices

GLOBALFOUNDRIES INC6 citations84
US9318552B2Apr 19, 2016

Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices

GLOBALFOUNDRIES INC15 citations84
US9263340B2Feb 16, 2016

Methods for removing selected fins that are formed for finFET semiconductor devices

GLOBALFOUNDRIES INC11 citations84
US9202918B2Dec 1, 2015

Methods of forming stressed layers on FinFET semiconductor devices and the resulting devices

GLOBALFOUNDRIES INC13 citations84
US9153694B2Oct 6, 2015

Methods of forming contact structures on finfet semiconductor devices and the resulting devices

GLOBALFOUNDRIES INC10 citations84
US9461171B2Oct 4, 2016

Methods of increasing silicide to epi contact areas and the resulting devices

GLOBALFOUNDRIES INC4 citations73
US9312182B2Apr 12, 2016

Forming gate and source/drain contact openings by performing a common etch patterning process

GLOBALFOUNDRIES INC6 citations73
US8877588B2Nov 4, 2014

Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device

GLOBALFOUNDRIES INC4 citations73
US9299781B2Mar 29, 2016

Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material

GLOBALFOUNDRIES INC2 citations63
US9231051B2Jan 5, 2016

Methods of forming spacers on FinFETs and other semiconductor devices

GLOBALFOUNDRIES INC2 citations63
US9171934B2Oct 27, 2015

Methods of forming semiconductor devices using a layer of material having a plurality of trenches formed therein

GLOBALFOUNDRIES INC2 citations63
US8962413B1Feb 24, 2015

Methods of forming spacers on FinFETs and other semiconductor devices

GLOBALFOUNDRIES INC0 citations52
US9330972B2May 3, 2016

Methods of forming contact structures for semiconductor devices and the resulting devices

GLOBALFOUNDRIES INC0 citations42
US9117930B2Aug 25, 2015

Methods of forming stressed fin channel structures for FinFET semiconductor devices

GLOBALFOUNDRIES INC0 citations41

MOTOROLA INC

9 patents

FREESCALE SEMICONDUCTOR INC

8 patents

GLOBALFOUNDRIES US INC

5 patents

TAYLOR JR WILLIAM J

4 patents

IBM

3 patents

CAMILLUS CUTLERY CO

1 patent

CAI XIUYU

1 patent

PHAM DANIEL T

1 patent