P

Inventor

LUDWIG CHRISTOPH

DE43 patents
⚠️ This page may combine multiple inventors who share the name “LUDWIG CHRISTOPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

22 patents
US6734063B2May 11, 2004

Non-volatile memory cell and fabrication method

INFINEON TECHNOLOGIES AG77 citations98
US6580118B2Jun 17, 2003

Non-volatile semiconductor memory cell having a metal oxide dielectric, and method for fabricating the memory cell

INFINEON TECHNOLOGIES AG36 citations93
US6628544B2Sep 30, 2003

Flash memory cell and method to achieve multiple bits per cell

INFINEON TECHNOLOGIES AG43 citations92
US7365382B2Apr 29, 2008

Semiconductor memory having charge trapping memory cells and fabrication method thereof

INFINEON TECHNOLOGIES AG32 citations91
US7274069B2Sep 25, 2007

Memory cell

INFINEON TECHNOLOGIES AG12 citations83
US7005355B2Feb 28, 2006

Method for fabricating semiconductor memories with charge trapping memory cells

INFINEON TECHNOLOGIES AG11 citations83
US7405441B2Jul 29, 2008

Semiconductor memory

INFINEON TECHNOLOGIES AG10 citations80
US6992348B2Jan 31, 2006

Semiconductor memory with vertical charge-trapping memory cells and fabrication

INFINEON TECHNOLOGIES AG9 citations73
US6654281B2Nov 25, 2003

Nonvolatile nor semiconductor memory device and method for programming the memory device

INFINEON TECHNOLOGIES AG11 citations69
US6368970B1Apr 9, 2002

Semiconductor configuration and corresponding production process

INFINEON TECHNOLOGIES AG7 citations68
US7323383B2Jan 29, 2008

Method for fabricating an NROM memory cell arrangement

INFINEON TECHNOLOGIES AG3 citations62
US7323388B2Jan 29, 2008

SONOS memory cells and arrays and method of forming the same

INFINEON TECHNOLOGIES AG4 citations62
US7122434B2Oct 17, 2006

Method for generating an electrical contact with buried track conductors

INFINEON TECHNOLOGIES AG5 citations62
US6909153B2Jun 21, 2005

Semiconductor structure having buried track conductors, and method for generating an electrical contact with buried track conductors

INFINEON TECHNOLOGIES AG5 citations62
US7662687B2Feb 16, 2010

Semiconductor memory having charge trapping memory cells and fabrication method thereof

INFINEON TECHNOLOGIES AG3 citations61
US7411837B2Aug 12, 2008

Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories

INFINEON TECHNOLOGIES AG4 citations60
US7145807B2Dec 5, 2006

Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories

INFINEON TECHNOLOGIES AG2 citations60
US7408222B2Aug 5, 2008

Charge trapping device and method of producing the charge trapping device

INFINEON TECHNOLOGIES AG4 citations57
US6711065B2Mar 23, 2004

1 T flash memory recovery scheme for over-erasure

INFINEON TECHNOLOGIES AG3 citations57
US6940123B2Sep 6, 2005

Memory cell array

INFINEON TECHNOLOGIES AG1 citations52
US7015095B2Mar 21, 2006

Method for fabricating a semiconductor memory having charge trapping memory cells and semiconductor substrate

INFINEON TECHNOLOGIES AG1 citations51
US6645812B2Nov 11, 2003

Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window

INFINEON TECHNOLOGIES AG0 citations48

INFINEON TECHNOLOGIES FLASH GM

4 patents

BOMBARDIER PRIMOVE GMBH

3 patents

RITTAL GMBH & CO KG

2 patents

ROCHE DIAGNOSTICS OPERATIONS INC

2 patents

QIMONDA AG

2 patents

STL SYSTEMS AG

2 patents

NSM AG

1 patent

KUND MICHAEL

1 patent

ERSA LOETTECHNIK GMBH

1 patent

QIMONDA FLASH GMBH

1 patent

DEUTSCHE TELEKOM AG

1 patent

STL SYSTEMTECHNIK LUDWIG GMBH

1 patent