Inventor
MORHARD KLAUS-DIETER
DE11 patents
⚠️ This page may combine multiple inventors who share the name “MORHARD KLAUS-DIETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
8 patentsUS6544856B2Apr 8, 2003
Method for increasing the trench capacitance
INFINEON TECHNOLOGIES AG14 citations81
US6548850B1Apr 15, 2003
Trench capacitor configuration and method of producing it
INFINEON TECHNOLOGIES AG8 citations72
US6329703B1Dec 11, 2001
Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact
INFINEON TECHNOLOGIES AG9 citations72
US7122434B2Oct 17, 2006
Method for generating an electrical contact with buried track conductors
INFINEON TECHNOLOGIES AG5 citations62
US6909153B2Jun 21, 2005
Semiconductor structure having buried track conductors, and method for generating an electrical contact with buried track conductors
INFINEON TECHNOLOGIES AG5 citations62
US7452821B2Nov 18, 2008
Method for the formation of contact holes for a number of contact regions for components integrated in a substrate
INFINEON TECHNOLOGIES AG2 citations60
US7618867B2Nov 17, 2009
Method of forming a doped portion of a semiconductor and method of forming a transistor
INFINEON TECHNOLOGIES AG5 citations58
US7030017B2Apr 18, 2006
Method for the planarization of a semiconductor structure
INFINEON TECHNOLOGIES AG0 citations39
SIEMENS AG
3 patentsUS6828191B1Dec 7, 2004
Trench capacitor with an insulation collar and method for producing a trench capacitor
SIEMENS AG53 citations90
US6509599B1Jan 21, 2003
Trench capacitor with insulation collar and method for producing the trench capacitor
SIEMENS AG41 citations90
US6068928AMay 30, 2000
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
SIEMENS AG8 citations72