Inventor
WANG YIN-PIN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “WANG YIN-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7750338B2Jul 6, 2010
Dual-SiGe epitaxy for MOS devices
TAIWAN SEMICONDUCTOR MFG27 citations92
US6902980B2Jun 7, 2005
Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region
TAIWAN SEMICONDUCTOR MFG24 citations92
US7449753B2Nov 11, 2008
Write margin improvement for SRAM cells with SiGe stressors
TAIWAN SEMICONDUCTOR MFG18 citations84
US6656845B2Dec 2, 2003
Method for forming semiconductor substrate with convex shaped active region
TAIWAN SEMICONDUCTOR MFG7 citations73
US7253062B2Aug 7, 2007
Semiconductor device with asymmetric pocket implants
TAIWAN SEMICONDUCTOR MFG8 citations70
US7453121B2Nov 18, 2008
Body contact formation in partially depleted silicon on insulator device
TAIWAN SEMICONDUCTOR MFG4 citations62
US7009248B2Mar 7, 2006
Semiconductor device with asymmetric pocket implants
TAIWAN SEMICONDUCTOR MFG3 citations59
US7129547B2Oct 31, 2006
Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS10468500B1Nov 5, 2019
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11276766B2Mar 15, 2022
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12349432B2Jul 1, 2025
Enlarged backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068392B2Aug 20, 2024
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62