Inventor
SUN SEY-SHING
US38 patents
⚠️ This page may combine multiple inventors who share the name “SUN SEY-SHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
12 patentsUS6987059B1Jan 17, 2006
Method and structure for creating ultra low resistance damascene copper wiring
LSI LOGIC CORP70 citations97
US6955937B1Oct 18, 2005
Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
LSI LOGIC CORP125 citations97
US7365015B2Apr 29, 2008
Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material
LSI LOGIC CORP20 citations92
US6998343B1Feb 14, 2006
Method for creating barrier layers for copper diffusion
LSI LOGIC CORP26 citations90
US7402770B2Jul 22, 2008
Nano structure electrode design
LSI LOGIC CORP10 citations84
US7196420B1Mar 27, 2007
Method and structure for creating ultra low resistance damascene copper wiring
LSI LOGIC CORP10 citations84
US7205673B1Apr 17, 2007
Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing
LSI LOGIC CORP7 citations71
US7179736B2Feb 20, 2007
Method for fabricating planar semiconductor wafers
LSI LOGIC CORP6 citations63
US7361965B2Apr 22, 2008
Method and apparatus for redirecting void diffusion away from vias in an integrated circuit design
LSI LOGIC CORP2 citations62
US7064062B2Jun 20, 2006
Incorporating dopants to enhance the dielectric properties of metal silicates
LSI LOGIC CORP1 citations52
US7015096B1Mar 21, 2006
Bimetallic oxide compositions for gate dielectrics
LSI LOGIC CORP0 citations52
US7582566B2Sep 1, 2009
Method for redirecting void diffusion away from vias in an integrated circuit design
LSI LOGIC CORP0 citations51
PLANAR SYSTEMS INC
9 patentsUS5598059AJan 28, 1997
AC TFEL device having a white light emitting multilayer phosphor
PLANAR SYSTEMS INC97 citations96
US4897319AJan 30, 1990
TFEL device having multiple layer insulators
PLANAR SYSTEMS INC56 citations96
US5581150ADec 3, 1996
TFEL device with injection layer
PLANAR SYSTEMS INC25 citations91
US5939825AAug 17, 1999
Alternating current thin film electroluminescent device having blue light emitting alkaline earth phosphor
PLANAR SYSTEMS INC24 citations90
US6169359B1Jan 2, 2001
Electroluminescent phosphor thin films with increased brightness that includes an alkali halide
PLANAR SYSTEMS INC19 citations88
US5505986AApr 9, 1996
Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices
PLANAR SYSTEMS INC48 citations87
US6072198AJun 6, 2000
Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants
PLANAR SYSTEMS INC16 citations82
US6242858B1Jun 5, 2001
Electroluminescent phosphor thin films
PLANAR SYSTEMS INC14 citations74
US6451460B1Sep 17, 2002
Thin film electroluminescent device
PLANAR SYSTEMS INC10 citations70
LSI CORP
8 patentsUS7405116B2Jul 29, 2008
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
LSI CORP18 citations92
US7300869B2Nov 27, 2007
Integrated barrier and seed layer for copper interconnect technology
LSI CORP16 citations79
US7956401B2Jun 7, 2011
Bi-axial texturing of high-K dielectric films to reduce leakage currents
LSI CORP2 citations62
US7436040B2Oct 14, 2008
Method and apparatus for diverting void diffusion in integrated circuit conductors
LSI CORP2 citations62
US7531442B2May 12, 2009
Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing
LSI CORP5 citations60
US8384165B2Feb 26, 2013
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
LSI CORP0 citations52
US7312127B2Dec 25, 2007
Incorporating dopants to enhance the dielectric properties of metal silicates
LSI CORP1 citations52
US7619272B2Nov 17, 2009
Bi-axial texturing of high-K dielectric films to reduce leakage currents
LSI CORP0 citations51