Inventor
CARLSON MERRI L
US11 patents
⚠️ This page may combine multiple inventors who share the name “CARLSON MERRI L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
10 patentsUS10090318B2Oct 2, 2018
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC23 citations93
US10446507B2Oct 15, 2019
Semiconductor devices and semiconductor dice including electrically conductive interconnects between die rings
MICRON TECHNOLOGY INC2 citations68
US11417681B2Aug 16, 2022
Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
MICRON TECHNOLOGY INC0 citations62
US10985179B2Apr 20, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
MICRON TECHNOLOGY INC0 citations62
US11271002B2Mar 8, 2022
Methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations61
US11018155B2May 25, 2021
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC0 citations61
US11329062B2May 10, 2022
Memory arrays and methods used in forming a memory array
MICRON TECHNOLOGY INC1 citations60
US12178045B2Dec 24, 2024
Microelectronic devices with tiered decks of aligned pillars exhibiting bending and related methods
MICRON TECHNOLOGY INC0 citations56
US11563027B2Jan 24, 2023
Microelectronic devices with tiered decks of differing pillar density and related methods and systems
MICRON TECHNOLOGY INC0 citations56
US10622374B2Apr 14, 2020
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC0 citations51