P

Inventor

VORA MADHUKAR B

US58 patents
⚠️ This page may combine multiple inventors who share the name “VORA MADHUKAR B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAIRCHILD CAMERA INSTR CO

15 patents
US4829363AMay 9, 1989

Structure for inhibiting dopant out-diffusion

FAIRCHILD CAMERA INSTR CO37 citations93
US4640004AFeb 3, 1987

Method and structure for inhibiting dopant out-diffusion

FAIRCHILD CAMERA INSTR CO44 citations93
US4543595ASep 24, 1985

Bipolar memory cell

FAIRCHILD CAMERA INSTR CO36 citations93
US4503598AMar 12, 1985

Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques

FAIRCHILD CAMERA INSTR CO78 citations91
US4418468ADec 6, 1983

Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes

FAIRCHILD CAMERA INSTR CO31 citations87
US4512075AApr 23, 1985

Method of making an integrated injection logic cell having self-aligned collector and base reduced resistance utilizing selective diffusion from polycrystalline regions

FAIRCHILD CAMERA INSTR CO25 citations82
US4425379AJan 10, 1984

Polycrystalline silicon Schottky diode array

FAIRCHILD CAMERA INSTR CO23 citations82
US4168999ASep 25, 1979

Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques

FAIRCHILD CAMERA INSTR CO27 citations76
US4545113AOct 8, 1985

Process for fabricating a lateral transistor having self-aligned base and base contact

FAIRCHILD CAMERA INSTR CO16 citations74
US4488350ADec 18, 1984

Method of making an integrated circuit bipolar memory cell

FAIRCHILD CAMERA INSTR CO7 citations74
US4628339ADec 9, 1986

Polycrystalline silicon Schottky diode array

FAIRCHILD CAMERA INSTR CO11 citations73
US4584594AApr 22, 1986

Logic structure utilizing polycrystalline silicon Schottky diodes

FAIRCHILD CAMERA INSTR CO10 citations73
US4435790AMar 6, 1984

High speed, nonvolatile, electrically erasable memory cell and system

FAIRCHILD CAMERA INSTR CO19 citations73
US4398338AAug 16, 1983

Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques

FAIRCHILD CAMERA INSTR CO19 citations73
US4374011AFeb 15, 1983

Process for fabricating non-encroaching planar insulating regions in integrated circuit structures

FAIRCHILD CAMERA INSTR CO11 citations66

FAIRCHILD SEMICONDUCTOR

7 patents

NAT SEMICONDUCTOR CORP

5 patents

TERAPEDE SYSTEMS INC

4 patents

DSM SOLUTIONS INC

4 patents

SUVOLTA INC

4 patents

DYNA LOGIC CORP

3 patents

VORA MADHUKAR B

2 patents

IBM

2 patents

(unassigned)

1 patent

DYNACHIP CORP

1 patent

TERAPEDE LLC

1 patent

NAT SEIMCONDUCTOR CORP

1 patent

Showing the top 50 of 58 patents by PatentIndex Score.