Inventor

STRANZL GUDRUN

AT26 patents

⚠️ This page may combine multiple inventors who share the name “STRANZL GUDRUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

STRANZL GUDRUN

INFINEON TECHNOLOGIES AG

Semiconductor chip with structured sidewalls

Method for processing a semiconductor substrate and a method for processing a semiconductor wafer

Plasma dicing of silicon carbide

Method for simultaneous structuring and chip singulation

Arrangement and method for manufacturing the same

Method of dicing a wafer

Silicon carbide devices and methods for manufacturing the same

Method of processing a silicon carbide containing crystalline substrate, silicon carbide chip, and processing chamber

Semiconductor devices including a metal silicide layer and methods for manufacturing thereof

Methods of singulating substrates to form semiconductor devices using dummy material

Separation of chips on a substrate

Singulation of semiconductor dies with contact metallization by electrical discharge machining

Integrated circuit substrate and method for manufacturing the same

Integrated circuit substrate and method for manufacturing the same

Method for simultaneous structuring and chip singulation

Methods of forming semiconductor devices

Separation of chips on a substrate

Kerf preparation for backside metallization

Layer arrangement

Method for processing a semiconductor workpiece with metallization

Method for processing a semiconductor workpiece with metallization

Methods for processing a semiconductor workpiece

Methods for processing a semiconductor wafer

HIRSCHLER JOACHIM

Use of a protection layer to protect a passivation while etching a wafer

STRANZL GUDRUN

Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material

ENGELHARDT MANFRED

Utilization of a metallization scheme as an etching mask