Inventor

SOORIYAKUMARAN RATNAM

US119 patents

⚠️ This page may combine multiple inventors who share the name “SOORIYAKUMARAN RATNAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SOORIYAKUMARAN RATNAM

IBM

Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method

Photoresist composition

Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films

Negative resists based on acid-catalyzed elimination of polar molecules

Patternable low dielectric constant materials and their use in ULSI interconnection

Patternable low dielectric constant materials and their use in ULSI interconnection

Antireflective SiO-containing compositions for hardmask layer

High silicon content monomers and polymers suitable for 193 nm bilayer resists

High silicon content monomers and polymers suitable for 193 nm bilayer resists

Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method

Lithographic photoresist composition and process for its use in the manufacture of integrated circuits

Process for using bilayer photoresist

Photoresist composition

Photoresist composition

Mid and deep-UV antireflection coatings and methods for use thereof

Mid and deep-UV antireflection coatings and methods for use thereof

Acid scavengers for use in chemically amplified photoresists

Molecular photoresists containing nonpolymeric silsesquioxanes

Low-activation energy silicon-containing resist system

Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent

Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures

Negative resists based on acid-catalyzed elimination of polar molecules

Imprint process using polyhedral oligomeric silsesquioxane based imprint materials

Photoresist topcoat for a photolithographic process

Negative resists based on a acid-catalyzed elimination of polar molecules

Underlayer compositions for multilayer lithographic processes

Photoresist composition and process for its use

Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane

Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer

Silicon containing positive resist for DUV lithography

Silicon-containing compositions for spin-on ARC/hardmask materials

Process for imaging of photoresist

Wet strippable gap fill materials

Dielectric tone inversion materials

Dielectric tone inversion materials

Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

Photopatternable dielectric materials for BEOL applications and methods for use

Composite membranes with performance enhancing layers

Photopatternable dielectric materials for BEOL applications and methods for use

Functionalized carbosilane polymers and photoresist compositions containing the same

Low activation energy dissolution modification agents for photoresist applications

Low activation energy photoresists

Non-ionic photo-acid generating polymers for resist applications

Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions

Low silicon-outgassing resist for bilayer lithography

CHENG JOY

Composite filtration membranes and methods of preparation thereof

Methods of forming topographical features using segregating polymer mixtures

SUMITOMO BAKELITE CO

Norbornene sulfonamide polymers

NA YOUNG-HYE

Composite membranes and methods of preparation thereof

GOODRICH CO B F

Polycyclic resist compositions with increased etch resistance