Inventor
ISHIGURO TAKESHI
JP36 patents
⚠️ This page may combine multiple inventors who share the name “ISHIGURO TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ICEMOS TECHNOLOGY LTD
8 patentsUS7723172B2May 25, 2010
Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
ICEMOS TECHNOLOGY LTD13 citations84
US8946814B2Feb 3, 2015
Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
ICEMOS TECHNOLOGY LTD8 citations83
US8963239B2Feb 24, 2015
800 V superjunction device
ICEMOS TECHNOLOGY LTD4 citations73
US9349725B2May 24, 2016
Stripe orientation for trenches and contact windows
ICEMOS TECHNOLOGY LTD2 citations63
US7846821B2Dec 7, 2010
Multi-angle rotation for ion implantation of trenches in superjunction devices
ICEMOS TECHNOLOGY LTD2 citations62
US7795045B2Sep 14, 2010
Trench depth monitor for semiconductor manufacturing
ICEMOS TECHNOLOGY LTD2 citations62
US8012806B2Sep 6, 2011
Multi-directional trenching of a die in manufacturing superjunction devices
ICEMOS TECHNOLOGY LTD0 citations52
US9147751B2Sep 29, 2015
Methods of manufacturing superjunction devices
ICEMOS TECHNOLOGY LTD1 citations51
SEMICONDUCTOR COMPONENTS IND
5 patentsUS6589845B1Jul 8, 2003
Method of forming a semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND21 citations92
US6613622B1Sep 2, 2003
Method of forming a semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND17 citations83
US6982461B2Jan 3, 2006
Lateral FET structure with improved blocking voltage and on resistance performance and method
SEMICONDUCTOR COMPONENTS IND13 citations80
US6555877B2Apr 29, 2003
NMOSFET with negative voltage capability formed in P-type substrate and method of making the same
SEMICONDUCTOR COMPONENTS IND2 citations63
US7632760B2Dec 15, 2009
Semiconductor device having field stabilization film and method
SEMICONDUCTOR COMPONENTS IND1 citations43
ICEMOS TECH LIMITED
5 patentsUS12230674B2Feb 18, 2025
Radiation hardened high voltage superjunction MOSFET
ICEMOS TECH LIMITED0 citations59
US11757001B2Sep 12, 2023
Radiation hardened high voltage superjunction MOSFET
ICEMOS TECH LIMITED0 citations59
US12527043B2Jan 13, 2026
Semiconductor device and method of forming charge balanced power MOSFET combining field plate and super-junction
ICEMOS TECH LIMITED0 citations46
US12598782B2Apr 7, 2026
Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain
ICEMOS TECH LIMITED0 citations43
US12506006B2Dec 23, 2025
Semiconductor device and method of direct wafer bonding between semiconductor layer containing similar WBG materials
ICEMOS TECH LIMITED0 citations43
ISHIGURO TAKESHI
3 patentsUS8580651B2Nov 12, 2013
Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
ISHIGURO TAKESHI14 citations82
US8114751B2Feb 14, 2012
Multi-angle rotation for ion implantation of trenches in superjunction devices
ISHIGURO TAKESHI4 citations61
US9543380B2Jan 10, 2017
Multi-directional trenching of a die in manufacturing superjunction devices
ISHIGURO TAKESHI0 citations50
DAICEL CHEM
2 patentsUS5811293ASep 22, 1998
Processes for producing optically active 2-amino-1-phenylethanol derivatives by reduction of the corresponding ketone
DAICEL CHEM9 citations73
US5629200AMay 13, 1997
Production of optically active 2-amino-1-phenylethanol derivatives by asymetrical assimilation
DAICEL CHEM6 citations73