Inventor

KIDOGUCHI ISAO

JP103 patents

⚠️ This page may combine multiple inventors who share the name “KIDOGUCHI ISAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIDOGUCHI ISAO

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

Semiconductor light-emitting device with quantum well

Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate

Semiconductor light emitting element and method for fabricating the same

Semiconductor light-emitting device and production method thereof

Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor

Method of manufacturing Group III nitride substrate and semiconductor device

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

Method for producing semiconductor and semiconductor laser device

Method for fabricating nitride semiconductor device

Semiconductor light-emitting device and production method thereof

Fabrication of semiconductor light-emitting device

Semiconductor laser and a method for producing the same

Semiconductor light-emitting device and production method thereof

Method for producing a semiconductor laser

Semiconductor laser and a method for producing the same

Semiconductor light emitting element and method for fabricating the same

Method of fabricating nitride semiconductor device

Semiconductor light emitting element and method for fabricating the same

Semiconductor laser device

Semiconductor light emitting element and method for fabricating the same

Semiconductor laser device with ridge structure

Semiconductor laser and cleaving method

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same

Semiconductor laser and manufacturing method thereof

Semiconductor laser device, method for fabricating the same, and optical disk apparatus

Semiconductor laser device

Method for producing compound single crystal and production apparatus for use therein

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

Nitride semiconductor laser and method for fabricating the same

Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same

Group-III-element nitride crystal semiconductor device

Method of manufacturing group III nitride substrate and semiconductor device

Semiconductor laser device optical disk apparatus and optical integrated unit

Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same

Semiconductor laser

Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same

Semiconductor laser device, optical disk apparatus and optical integrated unit

Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer

Method of fabricating nitride semiconductor device

Formation method for semiconductor layer

PANASONIC CORP

Ridge-stripe semiconductor laser

Nitride semiconductor device and process for producing the same

Method of manufacturing group III nitride substrate

Semiconductor laser device and laser projector

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

YUSUKE MORI

Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same

SUMITOMO ELECTRIC INDUSTRIES

Method for preparing single-crystal ZnSe