Inventor
COHEN GUY MOSHE
US32 patents
⚠️ This page may combine multiple inventors who share the name “COHEN GUY MOSHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
30 patentsUS7795677B2Sep 14, 2010
Nanowire field-effect transistors
IBM146 citations99
US7230286B2Jun 12, 2007
Vertical FET with nanowire channels and a silicided bottom contact
IBM109 citations99
US7060585B1Jun 13, 2006
Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization
IBM75 citations98
US6667528B2Dec 23, 2003
Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
IBM91 citations97
US7384830B2Jun 10, 2008
Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates
IBM37 citations96
US6645861B2Nov 11, 2003
Self-aligned silicide process for silicon sidewall source and drain contacts
IBM71 citations96
US6555880B2Apr 29, 2003
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
IBM54 citations96
US6300218B1Oct 9, 2001
Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
IBM74 citations96
US6503833B1Jan 7, 2003
Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
IBM83 citations95
US7915685B2Mar 29, 2011
Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
IBM12 citations92
US7355253B2Apr 8, 2008
Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates
IBM33 citations92
US7238589B2Jul 3, 2007
In-place bonding of microstructures
IBM16 citations92
US7115916B2Oct 3, 2006
System and method for molecular optical emission
IBM38 citations92
US6987050B2Jan 17, 2006
Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions
IBM21 citations92
US6985645B2Jan 10, 2006
Apparatus and methods for integrally packaging optoelectronic devices, IC chips and optical transmission lines
IBM14 citations92
US6716708B2Apr 6, 2004
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
IBM20 citations92
US6690072B2Feb 10, 2004
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device
IBM16 citations92
US6774015B1Aug 10, 2004
Strained silicon-on-insulator (SSOI) and method to form the same
IBM56 citations91
US7476573B2Jan 13, 2009
Methods of selective deposition of fine particles onto selected regions of a substrate
IBM8 citations84
US6972250B2Dec 6, 2005
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device
IBM16 citations84
US7161220B2Jan 9, 2007
High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same
IBM11 citations83
US6562642B1May 13, 2003
Micro-structures and methods for their manufacture
IBM13 citations83
US8053328B2Nov 8, 2011
Methods of selective deposition of fine particles onto selected regions of a substrate
IBM6 citations74
US7842562B2Nov 30, 2010
Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
IBM4 citations74
US7498640B2Mar 3, 2009
Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby
IBM5 citations74
US7496251B2Feb 24, 2009
Apparatus and methods for integrally packaging optoelectronic devices, IC chips and optical transmission lines
IBM5 citations74
US6713827B2Mar 30, 2004
Micro-structures and methods for their manufacture
IBM11 citations73
US7336863B2Feb 26, 2008
Apparatus and methods for integrally packaging optoelectronic devices, IC chips and optical transmission lines
IBM2 citations63
US7022544B2Apr 4, 2006
High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same
IBM3 citations62
US7812340B2Oct 12, 2010
Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
IBM3 citations61