Inventor
SCHRICKER APRIL D
US22 patents
⚠️ This page may combine multiple inventors who share the name “SCHRICKER APRIL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SCHRICKER APRIL D
10 patentsUS8309407B2Nov 13, 2012
Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
SCHRICKER APRIL D8 citations83
US8183121B2May 22, 2012
Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
SCHRICKER APRIL D10 citations83
US8467224B2Jun 18, 2013
Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
SCHRICKER APRIL D11 citations82
US8431417B2Apr 30, 2013
Methods for increasing carbon nano-tube (CNT) yield in memory devices
SCHRICKER APRIL D3 citations62
US8445385B2May 21, 2013
Methods for etching carbon nano-tube films for use in non-volatile memories
SCHRICKER APRIL D3 citations60
US8530318B2Sep 10, 2013
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
SCHRICKER APRIL D1 citations51
US8507315B2Aug 13, 2013
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL D0 citations51
US8304284B2Nov 6, 2012
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
SCHRICKER APRIL D0 citations51
US8173486B2May 8, 2012
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL D0 citations51
US8878235B2Nov 4, 2014
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL D1 citations50
SANDISK 3D LLC
5 patentsUS8373150B2Feb 12, 2013
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC1 citations62
US7977667B2Jul 12, 2011
Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC5 citations62
US8809114B2Aug 19, 2014
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC0 citations52
US8816315B2Aug 26, 2014
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC0 citations51
US9047949B2Jun 2, 2015
Non-volatile storage system using opposite polarity programming signals for MIM memory cell
SANDISK 3D LLC0 citations48