Inventor
KANE TERENCE L
US22 patents
⚠️ This page may combine multiple inventors who share the name “KANE TERENCE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS10504807B2Dec 10, 2019
Time temperature monitoring system
IBM5 citations82
US10032683B2Jul 24, 2018
Time temperature monitoring system
IBM10 citations82
US7205237B2Apr 17, 2007
Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization
IBM15 citations80
US9279849B2Mar 8, 2016
Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
IBM4 citations72
US9170273B2Oct 27, 2015
High frequency capacitance-voltage nanoprobing characterization
IBM6 citations71
US8367484B2Feb 5, 2013
Antifuse structure for in line circuit modification
IBM1 citations62
US7993504B2Aug 9, 2011
Backside unlayering of MOSFET devices for electrical and physical characterization
IBM3 citations61
US7371689B2May 13, 2008
Backside unlayering of MOSFET devices for electrical and physical characterization
IBM3 citations61
US6703641B2Mar 9, 2004
Structure for detecting charging effects in device processing
IBM6 citations60
US8536555B2Sep 17, 2013
Voltage sensitive resistor (VSR) read only memory
IBM0 citations52
US8367483B2Feb 5, 2013
Antifuse structure for in line circuit modification
IBM0 citations52
US8368070B2Feb 5, 2013
Antifuse structure for in line circuit modification
IBM0 citations52
US8368069B2Feb 5, 2013
Antifuse structure for in line circuit modification
IBM0 citations52
US9201112B2Dec 1, 2015
Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
IBM0 citations51
US7881093B2Feb 1, 2011
Programmable precision resistor and method of programming the same
IBM1 citations51
US7015146B2Mar 21, 2006
Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma
IBM0 citations51
US10217682B2Feb 26, 2019
Time temperature monitoring system
IBM0 citations50
DOMENICUCCI ANTHONY G
2 patentsUS8236709B2Aug 7, 2012
Method of fabricating a device using low temperature anneal processes, a device and design structure
DOMENICUCCI ANTHONY G6 citations81
US8490029B2Jul 16, 2013
Method of fabricating a device using low temperature anneal processes, a device and design structure
DOMENICUCCI ANTHONY G0 citations49