Inventor
MOTONAMI KAORU
JP37 patents
⚠️ This page may combine multiple inventors who share the name “MOTONAMI KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
33 patentsUS5453952ASep 26, 1995
Semiconductor device having peripheral circuit formed of TFT (thin film transistor)
MITSUBISHI ELECTRIC CORP80 citations96
US5364811ANov 15, 1994
Method of manufacturing a semiconductor memory device with multiple device forming regions
MITSUBISHI ELECTRIC CORP26 citations93
US5240872AAug 31, 1993
Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions
MITSUBISHI ELECTRIC CORP29 citations93
US5218219AJun 8, 1993
Semiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit region
MITSUBISHI ELECTRIC CORP35 citations93
US5173752ADec 22, 1992
Semiconductor device having interconnection layer contacting source/drain regions
MITSUBISHI ELECTRIC CORP22 citations93
US6025620AFeb 15, 2000
Semiconductor device and method of producing the same
MITSUBISHI ELECTRIC CORP47 citations92
US5888851AMar 30, 1999
Method of manufacturing a semiconductor device having a circuit portion and redundant circuit portion coupled through a meltable connection
MITSUBISHI ELECTRIC CORP27 citations92
US5801427ASep 1, 1998
Semiconductor device having a polycide structure
MITSUBISHI ELECTRIC CORP26 citations92
US5614745AMar 25, 1997
Contact structure between two conductive layers in semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP19 citations92
US5441916AAug 15, 1995
Method of manufacturing semiconductor device comprising interconnection
MITSUBISHI ELECTRIC CORP33 citations92
US5323049AJun 21, 1994
Semiconductor device with an interconnection layer on surface having a step portion
MITSUBISHI ELECTRIC CORP37 citations92
US5241212AAug 31, 1993
Semiconductor device having a redundant circuit portion and a manufacturing method of the same
MITSUBISHI ELECTRIC CORP44 citations92
US5229314AJul 20, 1993
Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
MITSUBISHI ELECTRIC CORP33 citations92
US5309023AMay 3, 1994
Contact structure for interconnection in semiconductor devices and manufacturing method thereof
MITSUBISHI ELECTRIC CORP35 citations87
US5393688AFeb 28, 1995
Method of manufacturing a stacked capacitor DRAM
MITSUBISHI ELECTRIC CORP16 citations82
US5185284AFeb 9, 1993
Method of making a semiconductor memory device
MITSUBISHI ELECTRIC CORP20 citations82
US5440165AAug 8, 1995
Semiconductor device with means for suppressing electric fields
MITSUBISHI ELECTRIC CORP17 citations77
US5089868AFeb 18, 1992
Semiconductor memory device with improved groove capacitor
MITSUBISHI ELECTRIC CORP8 citations74
US6040614AMar 21, 2000
Semiconductor integrated circuit including a capacitor and a fuse element
MITSUBISHI ELECTRIC CORP10 citations72
US6033971AMar 7, 2000
Semiconductor device having an element isolating oxide film and method of manufacturing the same
MITSUBISHI ELECTRIC CORP13 citations72
US5831323ANov 3, 1998
Semiconductor device having an element isolating oxide film and method of manufacturing the same
MITSUBISHI ELECTRIC CORP11 citations72
US6259147B1Jul 10, 2001
Semiconductor device having a fuse layer
MITSUBISHI ELECTRIC CORP7 citations71
US5962907AOct 5, 1999
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP4 citations63
US5365474ANov 15, 1994
Semiconductor memory device
MITSUBISHI ELECTRIC CORP3 citations63
US5280444AJan 18, 1994
Dram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the same
MITSUBISHI ELECTRIC CORP4 citations63
US7754541B2Jul 13, 2010
Display device and method of producing the same
MITSUBISHI ELECTRIC CORP5 citations60
US5635413AJun 3, 1997
Method of manufacturing field effect transistor
MITSUBISHI ELECTRIC CORP5 citations58
US10497850B2Dec 3, 2019
Thermoelectric converter and manufacturing method for manufacturing thermoelectric converter
MITSUBISHI ELECTRIC CORP0 citations52
US7582900B2Sep 1, 2009
Array substrate for an image display device
MITSUBISHI ELECTRIC CORP1 citations52
US7397063B2Jul 8, 2008
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations52
US6162674ADec 19, 2000
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US5157469AOct 20, 1992
Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators
MITSUBISHI ELECTRIC CORP0 citations42
US10187009B2Jan 22, 2019
Method for diagnosing solar cell module, and diagnostic circuit and diagnostic system for solar cell module
MITSUBISHI ELECTRIC CORP0 citations39