Inventor
TCHELNOKOV ALEXEI
FR18 patents
⚠️ This page may combine multiple inventors who share the name “TCHELNOKOV ALEXEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
11 patentsUS10050080B2Aug 14, 2018
Optoelectronic device and method for manufacturing same
COMMISSARIAT ENERGIE ATOMIQUE13 citations84
US11251339B2Feb 15, 2022
Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer
COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US9774167B2Sep 26, 2017
Method of production of a semiconducting structure comprising a strained portion
COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US7881571B2Feb 1, 2011
Coupling device with compensated birefringence
COMMISSARIAT ENERGIE ATOMIQUE6 citations62
US11430373B2Aug 30, 2022
LED display device
COMMISSARIAT ENERGIE ATOMIQUE1 citations61
US10699902B2Jun 30, 2020
Process for producing a strained layer based on germanium-tin
COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US10666019B2May 26, 2020
Semiconductor structure including a suspended membrane containing a central segment of structured thickness
COMMISSARIAT ENERGIE ATOMIQUE1 citations56
US7795575B2Sep 14, 2010
Light-emitting device with chromatic control
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US11165225B2Nov 2, 2021
Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US10777701B2Sep 15, 2020
Photosensitive detector with self-aligned 3D junction and gate
COMMISSARIAT ENERGIE ATOMIQUE0 citations36
US9735317B2Aug 15, 2017
Method for forming a semiconducting portion by epitaxial growth on a strained portion
COMMISSARIAT ENERGIE ATOMIQUE0 citations35