Inventor
MATSUI YASUSHI
JP43 patents
⚠️ This page may combine multiple inventors who share the name “MATSUI YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
21 patentsUS6256331B1Jul 3, 2001
Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US6151351ANov 21, 2000
Distributed feedback semiconductor laser and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6110756AAug 29, 2000
Method for producing semiconductor laser
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD35 citations92
US6104738AAug 15, 2000
Semiconductor laser and process for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD48 citations92
US5568501AOct 22, 1996
Semiconductor laser and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US5490227AFeb 6, 1996
Light receiving module for SCM transmission
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33 citations92
US5319657AJun 7, 1994
Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations92
US4843609AJun 27, 1989
Optical integrated circuit for heterodyne detection
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US5381499AJan 10, 1995
Light-emitting and light-receiving assembly and method of manufacture thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations91
US5784188AJul 21, 1998
Electro-absorption optical modulator and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US5539766AJul 23, 1996
Distributed feedback semiconductor laser
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations82
US6107112AAug 22, 2000
Distributed feedback semiconductor laser and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations74
US5494521AFeb 27, 1996
Apparatus and method for vapor growth
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US5308433AMay 3, 1994
Apparatus and method for vapor growth
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US5960257ASep 28, 1999
Method distributed feedback semiconductor laser for fabricating
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations73
US5856207AJan 5, 1999
Method for producing a semiconductor laser
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US5621747AApr 15, 1997
Multi quantum well semiconductor laser and optical communication system using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5339325AAug 16, 1994
Strained multiple quantum well semiconductor laser and a method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations73
US5652762AJul 29, 1997
Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6636541B1Oct 21, 2003
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62
US5764682AJun 9, 1998
Distributed feedback semiconductor laser and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations62
MITSUBISHI ELECTRIC CORP
9 patentsUS5240872AAug 31, 1993
Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions
MITSUBISHI ELECTRIC CORP29 citations93
US5173752ADec 22, 1992
Semiconductor device having interconnection layer contacting source/drain regions
MITSUBISHI ELECTRIC CORP22 citations93
US5229314AJul 20, 1993
Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
MITSUBISHI ELECTRIC CORP33 citations92
US7554119B2Jun 30, 2009
Active matrix substrate and its manufacturing method
MITSUBISHI ELECTRIC CORP9 citations80
US5338699AAug 16, 1994
Method of making a semiconductor integrated device having gate sidewall structure
MITSUBISHI ELECTRIC CORP8 citations74
US5233212AAug 3, 1993
Semiconductor device having gate electrode spacing dependent upon gate side wall insulating dimension
MITSUBISHI ELECTRIC CORP9 citations74
US7923729B2Apr 12, 2011
Active matrix substrate and its manufacturing method
MITSUBISHI ELECTRIC CORP2 citations59
US7630049B2Dec 8, 2009
Display device and method with lower layer film formed on substrate but between transparent conductive film and organic layer and then protective film on the transparent film
MITSUBISHI ELECTRIC CORP1 citations52
US5157469AOct 20, 1992
Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators
MITSUBISHI ELECTRIC CORP0 citations42
SHOWA DENKO KK
5 patentsUS4729846AMar 8, 1988
Method for manufacturing lepidocrocite
SHOWA DENKO KK41 citations92
US6207325B1Mar 27, 2001
Lithium-containing complex metal oxide, preparation methods thereof, and cathode electroactive material using the same and lithium secondary cells
SHOWA DENKO KK24 citations86
US4748017AMay 31, 1988
Method for manufacturing lepidocrocite
SHOWA DENKO KK7 citations69
US5573983ANov 12, 1996
Fine silica tube and process for making same
SHOWA DENKO KK3 citations63
US5039553AAug 13, 1991
Mixed batchwise and continuous process for the production of cobalt modified magnetic iron oxide powder for use in high density recording
SHOWA DENKO KK1 citations51
ADVANCED DISPLAY KK
3 patentsUS6774965B2Aug 10, 2004
Liquid crystal display device and manufacturing method thereof
ADVANCED DISPLAY KK28 citations92
US7106403B2Sep 12, 2006
Transflective display with through hole extending through a light shield in the transmissive region of the display
ADVANCED DISPLAY KK12 citations84
US7113252B2Sep 26, 2006
Method of mending breakage of line in display device
ADVANCED DISPLAY KK3 citations62