Inventor
BARBE JEAN-CHARLES
FR21 patents
⚠️ This page may combine multiple inventors who share the name “BARBE JEAN-CHARLES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
15 patentsUS7675217B2Mar 9, 2010
Mechanical oscillator formed by a network of basic oscillators
COMMISSARIAT ENERGIE ATOMIQUE19 citations91
US8363330B2Jan 29, 2013
Membrane, especially for an optical device having a deformable membrane
COMMISSARIAT ENERGIE ATOMIQUE3 citations61
US7985632B2Jul 26, 2011
Method for forming microwires and/or nanowires
COMMISSARIAT ENERGIE ATOMIQUE3 citations60
US7713850B2May 11, 2010
Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision
COMMISSARIAT ENERGIE ATOMIQUE4 citations60
US8343780B2Jan 1, 2013
Method of stressing a thin pattern
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US7473588B2Jan 6, 2009
Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US7579226B2Aug 25, 2009
Thin layer element and associated fabrication process
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US8853023B2Oct 7, 2014
Method for stressing a thin pattern and transistor fabrication method incorporating said method
COMMISSARIAT ENERGIE ATOMIQUE1 citations48
US7625811B2Dec 1, 2009
Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures
COMMISSARIAT ENERGIE ATOMIQUE1 citations47
US7635615B2Dec 22, 2009
Manufacturing processing for an isolated transistor with strained channel
COMMISSARIAT ENERGIE ATOMIQUE0 citations46
US7510919B2Mar 31, 2009
Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon
COMMISSARIAT ENERGIE ATOMIQUE0 citations46
US6988392B2Jan 24, 2006
Relaxation-type viscosimeter having a magnetic field generator and method therefor
COMMISSARIAT ENERGIE ATOMIQUE0 citations45
US10109484B2Oct 23, 2018
Method for producing nanocrystals with controlled dimensions and density
COMMISSARIAT ENERGIE ATOMIQUE0 citations43
US9853130B2Dec 26, 2017
Method of modifying the strain state of a semiconducting structure with stacked transistor channels
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US7951659B2May 31, 2011
Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively
COMMISSARIAT ENERGIE ATOMIQUE0 citations32