Inventor
VINCENT BENJAMIN
US27 patents
⚠️ This page may combine multiple inventors who share the name “VINCENT BENJAMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC
8 patentsUS9476143B2Oct 25, 2016
Methods using mask structures for substantially defect-free epitaxial growth
IMEC7 citations84
US9171904B2Oct 27, 2015
FinFET device with dual-strained channels and method for manufacturing thereof
IMEC13 citations84
US9117777B2Aug 25, 2015
Methods for manufacturing semiconductor devices
IMEC10 citations83
US9029217B1May 12, 2015
Band engineered semiconductor device and method for manufacturing thereof
IMEC5 citations83
US9263528B2Feb 16, 2016
Method for producing strained Ge fin structures
IMEC3 citations72
US10340139B2Jul 2, 2019
Methods and mask structures for substantially defect-free epitaxial growth
IMEC0 citations52
US8963225B2Feb 24, 2015
Band engineered semiconductor device and method for manufacturing thereof
IMEC1 citations51
US9263263B2Feb 16, 2016
Method for selective growth of highly doped group IV—Sn semiconductor materials
IMEC0 citations48
VINCENT BENJAMIN
5 patentsUS8709918B2Apr 29, 2014
Method for selective deposition of a semiconductor material
VINCENT BENJAMIN0 citations50
US8247313B2Aug 21, 2012
Method for preparing a germanium layer from a silicon-germanium-on-isolator substrate
VINCENT BENJAMIN1 citations50
US8501596B2Aug 6, 2013
Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient
VINCENT BENJAMIN1 citations47
US8569801B2Oct 29, 2013
Three-dimensional CMOS circuit on two offset substrates and method for making same
VINCENT BENJAMIN0 citations39
US8530339B2Sep 10, 2013
Method for direct deposition of a germanium layer
VINCENT BENJAMIN0 citations34