P

Inventor

LEE EUN-HA

KR32 patents
⚠️ This page may combine multiple inventors who share the name “LEE EUN-HA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

13 patents
US7935964B2May 3, 2011

Oxide semiconductors and thin film transistors comprising the same

SAMSUNG ELECTRONICS CO LTD190 citations99
US7919365B2Apr 5, 2011

Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor

SAMSUNG ELECTRONICS CO LTD70 citations98
US9110233B2Aug 18, 2015

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations73
US6333251B1Dec 25, 2001

Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer

SAMSUNG ELECTRONICS CO LTD7 citations73
US6245620B1Jun 12, 2001

Method for foaming MOS transistor having bi-layered spacer

SAMSUNG ELECTRONICS CO LTD10 citations66
US9316789B2Apr 19, 2016

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US9190270B2Nov 17, 2015

Low-defect semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US8993420B2Mar 31, 2015

Methods of forming epitaxial layers

SAMSUNG ELECTRONICS CO LTD3 citations59
US9425323B2Aug 23, 2016

Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US8043952B2Oct 25, 2011

Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7964908B2Jun 21, 2011

Memory devices comprising nano region embedded dielectric layers

SAMSUNG ELECTRONICS CO LTD1 citations51
US7838422B2Nov 23, 2010

Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US8053366B2Nov 8, 2011

Al-doped charge trap layer and non-volatile memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations48

KOREA INST SCI & TECH

4 patents

MANDO CORP

2 patents

LG DISPLAY CO LTD

2 patents

OH TAE YOUNG

2 patents

YOO DONG-CHUL

2 patents

LEE JAE-CHEOL

1 patent

LEE EUN-HA

1 patent

HYNIX SEMICONDUCTOR INC

1 patent

JUNG MOON-IL

1 patent

SHIN JUNG-EUN

1 patent

KIM GEON-YONG

1 patent

PARK SAROHAN

1 patent