Inventor
KIM SUK PIL
KR60 patents
⚠️ This page may combine multiple inventors who share the name “KIM SUK PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
37 patentsUS7622761B2Nov 24, 2009
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD247 citations99
US7910909B2Mar 22, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD50 citations94
US8017991B2Sep 13, 2011
Non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US7863672B2Jan 4, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD24 citations93
US7700935B2Apr 20, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD43 citations93
US7560344B2Jul 14, 2009
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations93
US7514325B2Apr 7, 2009
Fin-FET having GAA structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations93
US7598095B2Oct 6, 2009
Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD25 citations92
US7352037B2Apr 1, 2008
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
SAMSUNG ELECTRONICS CO LTD32 citations92
US7948024B2May 24, 2011
Multi-layered, vertically stacked non-volatile memory device and method of fabrication
SAMSUNG ELECTRONICS CO LTD16 citations84
US7932551B2Apr 26, 2011
Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
SAMSUNG ELECTRONICS CO LTD11 citations84
US7910967B2Mar 22, 2011
Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7796432B2Sep 14, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7663166B2Feb 16, 2010
Wire-type semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7652308B2Jan 26, 2010
Semiconductor device having gate-all-around structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7436704B2Oct 14, 2008
Non-volatile memory devices and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7419859B2Sep 2, 2008
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD13 citations84
US7829932B2Nov 9, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US9318573B2Apr 19, 2016
Field effect transistor having germanium nanorod and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US7833890B2Nov 16, 2010
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7807517B2Oct 5, 2010
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD7 citations74
US7675779B2Mar 9, 2010
Non-volatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US9219168B2Dec 22, 2015
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US8053822B2Nov 8, 2011
Capacitorless DRAM and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7986545B2Jul 26, 2011
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7947590B2May 24, 2011
Method of manufacturing a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7894265B2Feb 22, 2011
Non-volatile memory device and operation method of the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7813180B2Oct 12, 2010
Non-volatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7750393B2Jul 6, 2010
Non-volatile memory device with independent channel regions adjacent different sides of a common control gate
SAMSUNG ELECTRONICS CO LTD6 citations63
US7674661B2Mar 9, 2010
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7662678B2Feb 16, 2010
Method of forming a more highly-oriented silicon layer and substrate having the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7551491B2Jun 23, 2009
Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7518181B2Apr 14, 2009
Semiconductor memory device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7682758B2Mar 23, 2010
Reflection mask for EUV photolithography and method of fabricating the reflection mask
SAMSUNG ELECTRONICS CO LTD2 citations62
US7274513B2Sep 25, 2007
Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8379480B2Feb 19, 2013
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8017477B2Sep 13, 2011
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
KIM SUK-PIL
2 patentsFOSSUM ERIC
1 patentKOO JUNE-MO
1 patentCHOI SANG-JUN
1 patentJIN YOUNG-GU
1 patentAHN SEUNG-EON
1 patentSAMSUNG ELECRONICS CO LTD
1 patentSAMSUNG ELCTRONICS CO LTD
1 patentKIM SUK PIL
1 patentSEOL KWANG-SOO
1 patentKOREA ADVANCED INST SCI & TECH
1 patentKIM DEOK-KEE
1 patentShowing the top 50 of 60 patents by PatentIndex Score.