P

Inventor

KIM SUK PIL

KR60 patents
⚠️ This page may combine multiple inventors who share the name “KIM SUK PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

37 patents
US7622761B2Nov 24, 2009

Non-volatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD247 citations99
US7910909B2Mar 22, 2011

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD50 citations94
US8017991B2Sep 13, 2011

Non-volatile memory device and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations93
US7863672B2Jan 4, 2011

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD24 citations93
US7700935B2Apr 20, 2010

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD43 citations93
US7560344B2Jul 14, 2009

Semiconductor device having a pair of fins and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations93
US7514325B2Apr 7, 2009

Fin-FET having GAA structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations93
US7598095B2Oct 6, 2009

Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD25 citations92
US7352037B2Apr 1, 2008

Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions

SAMSUNG ELECTRONICS CO LTD32 citations92
US7948024B2May 24, 2011

Multi-layered, vertically stacked non-volatile memory device and method of fabrication

SAMSUNG ELECTRONICS CO LTD16 citations84
US7932551B2Apr 26, 2011

Nonvolatile memory device and method of fabricating the same comprising a dual fin structure

SAMSUNG ELECTRONICS CO LTD11 citations84
US7910967B2Mar 22, 2011

Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7796432B2Sep 14, 2010

Non-volatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7663166B2Feb 16, 2010

Wire-type semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US7652308B2Jan 26, 2010

Semiconductor device having gate-all-around structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7436704B2Oct 14, 2008

Non-volatile memory devices and method thereof

SAMSUNG ELECTRONICS CO LTD14 citations84
US7419859B2Sep 2, 2008

Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions

SAMSUNG ELECTRONICS CO LTD13 citations84
US7829932B2Nov 9, 2010

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations83
US9318573B2Apr 19, 2016

Field effect transistor having germanium nanorod and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations82
US7833890B2Nov 16, 2010

Semiconductor device having a pair of fins and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7807517B2Oct 5, 2010

Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions

SAMSUNG ELECTRONICS CO LTD7 citations74
US7675779B2Mar 9, 2010

Non-volatile memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US9219168B2Dec 22, 2015

Non-volatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US8053822B2Nov 8, 2011

Capacitorless DRAM and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7986545B2Jul 26, 2011

Non-volatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7947590B2May 24, 2011

Method of manufacturing a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7894265B2Feb 22, 2011

Non-volatile memory device and operation method of the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7813180B2Oct 12, 2010

Non-volatile memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7750393B2Jul 6, 2010

Non-volatile memory device with independent channel regions adjacent different sides of a common control gate

SAMSUNG ELECTRONICS CO LTD6 citations63
US7674661B2Mar 9, 2010

Memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7662678B2Feb 16, 2010

Method of forming a more highly-oriented silicon layer and substrate having the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7551491B2Jun 23, 2009

Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US7518181B2Apr 14, 2009

Semiconductor memory device and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7682758B2Mar 23, 2010

Reflection mask for EUV photolithography and method of fabricating the reflection mask

SAMSUNG ELECTRONICS CO LTD2 citations62
US7274513B2Sep 25, 2007

Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US8379480B2Feb 19, 2013

Non-volatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8017477B2Sep 13, 2011

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52

KIM SUK-PIL

2 patents

FOSSUM ERIC

1 patent

KOO JUNE-MO

1 patent

CHOI SANG-JUN

1 patent

JIN YOUNG-GU

1 patent

AHN SEUNG-EON

1 patent

SAMSUNG ELECRONICS CO LTD

1 patent

SAMSUNG ELCTRONICS CO LTD

1 patent

KIM SUK PIL

1 patent

SEOL KWANG-SOO

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

KIM DEOK-KEE

1 patent

Showing the top 50 of 60 patents by PatentIndex Score.