P

Inventor

YOON TAE EUNG

KR14 patents
⚠️ This page may combine multiple inventors who share the name “YOON TAE EUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

8 patents
US7948024B2May 24, 2011

Multi-layered, vertically stacked non-volatile memory device and method of fabrication

SAMSUNG ELECTRONICS CO LTD16 citations84
US7885115B2Feb 8, 2011

Non-volatile memory devices and methods of operating non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD10 citations84
US7796432B2Sep 14, 2010

Non-volatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US10043873B2Aug 7, 2018

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations71
US7986545B2Jul 26, 2011

Non-volatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7894265B2Feb 22, 2011

Non-volatile memory device and operation method of the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US8901009B2Dec 2, 2014

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations62
US10553693B2Feb 4, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations38

FOSSUM ERIC

1 patent
US8625016B2Jan 7, 2014

Image sensors having multiple photoelectric conversion devices therein

FOSSUM ERIC61 citations95

KOO JUNE-MO

1 patent
US8124968B2Feb 28, 2012

Non-volatile memory device

KOO JUNE-MO91 citations95

LEE JAEKYU

1 patent
US8614433B2Dec 24, 2013

Semiconductor devices and methods of manufacturing the same

LEE JAEKYU25 citations91

KOO JUNEMO

1 patent
US8637910B2Jan 28, 2014

Image sensor

KOO JUNEMO20 citations85

KIM SUK-PIL

1 patent
US8120006B2Feb 21, 2012

Non-volatile memory device

KIM SUK-PIL13 citations83

YOON TAE-EUNG

1 patent
US8581363B2Nov 12, 2013

Phase-change memory device including a vertically-stacked capacitor and a method of the same

YOON TAE-EUNG3 citations56