Inventor
LIM KWANYONG
US13 patents
⚠️ This page may combine multiple inventors who share the name “LIM KWANYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
9 patentsUS11296083B2Apr 5, 2022
Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuits
QUALCOMM INC2 citations72
US11444201B2Sep 13, 2022
Leakage current reduction in polysilicon-on-active-edge structures
QUALCOMM INC0 citations62
US11145654B2Oct 12, 2021
Field effect transistor (FET) comprising channels with silicon germanium (SiGe)
QUALCOMM INC1 citations62
US12506035B2Dec 23, 2025
Self-aligned source/drain contact structure and method of manufacturing the same
QUALCOMM INC0 citations61
US11075206B2Jul 27, 2021
SRAM source-drain structure
QUALCOMM INC0 citations60
US12457783B2Oct 28, 2025
Selective contact on source and drain
QUALCOMM INC0 citations59
US12575122B2Mar 10, 2026
Fin-based field effect transistor (FET) source/drain strain to enhance driver current and performance
QUALCOMM INC0 citations58
US12513955B2Dec 30, 2025
Transistors having different channel lengths and comparable source/drain spaces
QUALCOMM INC0 citations51
US10600774B2Mar 24, 2020
Systems and methods for fabrication of gated diodes with selective epitaxial growth
QUALCOMM INC0 citations51
GLOBALFOUNDRIES INC
3 patentsUS9847333B2Dec 19, 2017
Reducing risk of punch-through in FinFET semiconductor structure
GLOBALFOUNDRIES INC4 citations71
US10854510B2Dec 1, 2020
Titanium silicide formation in a narrow source-drain contact
GLOBALFOUNDRIES INC0 citations51
US9779987B2Oct 3, 2017
Titanium silicide formation in a narrow source-drain contact
GLOBALFOUNDRIES INC0 citations51