Inventor
SCHROTT ALEJANDRO G
US85 patents
⚠️ This page may combine multiple inventors who share the name “SCHROTT ALEJANDRO G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
34 patentsUS7560721B1Jul 14, 2009
Phase change material with filament electrode
IBM42 citations96
US5565847AOct 15, 1996
Magnetic tag using acoustic or magnetic interrogation
IBM69 citations96
US5563583AOct 8, 1996
Multibit magnetic radio frequency tag using micromechanics
IBM70 citations96
US5552778ASep 3, 1996
Multibit bimorph magnetic tags using acoustic or magnetic interrogation for identification of an object coupled thereto
IBM62 citations96
US5382447AJan 17, 1995
Process for fabricating improved multilayer interconnect systems
IBM49 citations96
US7868313B2Jan 11, 2011
Phase change memory device and method of manufacture
IBM25 citations93
US7825460B2Nov 2, 2010
Vertical field effect transistor arrays and methods for fabrication thereof
IBM16 citations93
US7485487B1Feb 3, 2009
Phase change memory cell with electrode
IBM28 citations93
US7488967B2Feb 10, 2009
Structure for confining the switching current in phase memory (PCM) cells
IBM40 citations92
US6555393B2Apr 29, 2003
Process for fabricating a field-effect transistor with a buried Mott material oxide channel
IBM16 citations92
US6426536B1Jul 30, 2002
Double layer perovskite oxide electrodes
IBM35 citations92
US6350622B2Feb 26, 2002
Process for fabrication of an all-epitaxial-oxide transistor
IBM19 citations92
US6333543B1Dec 25, 2001
Field-effect transistor with a buried mott material oxide channel
IBM28 citations92
US6259114B1Jul 10, 2001
Process for fabrication of an all-epitaxial-oxide transistor
IBM16 citations92
US5316573AMay 31, 1994
Corrosion inhibition with CU-BTA
IBM23 citations89
US5260108ANov 9, 1993
Selective seeding of Pd by excimer laser radiation through the liquid
IBM38 citations89
US9251884B2Feb 2, 2016
Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
IBM6 citations84
US9166161B2Oct 20, 2015
Phase change memory cell with large electrode contact area
IBM9 citations84
US8946073B2Feb 3, 2015
Phase change memory cell with large electrode contact area
IBM6 citations84
US8921820B2Dec 30, 2014
Phase change memory cell with large electrode contact area
IBM11 citations84
US8680501B2Mar 25, 2014
Memory cell with post deposition method for regrowth of crystalline phase change material
IBM4 citations84
US8030130B2Oct 4, 2011
Phase change memory device with plated phase change material
IBM14 citations84
US7960203B2Jun 14, 2011
Pore phase change material cell fabricated from recessed pillar
IBM9 citations84
US7491573B1Feb 17, 2009
Phase change materials for applications that require fast switching and high endurance
IBM12 citations84
US9179610B2Nov 10, 2015
Controllable emitter
IBM6 citations83
US6562633B2May 13, 2003
Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains
IBM17 citations81
US5453642ASep 26, 1995
Multilayer interconnect systems
IBM11 citations74
US10561077B2Feb 18, 2020
Pressure driven irrigation system
IBM3 citations73
US10165736B2Jan 1, 2019
Autonomous mobile platform and variable rate irrigation method for preventing frost damage
IBM1 citations73
US9851287B2Dec 26, 2017
Size distribution determination of aerosols using hyperspectral image technology and analytics
IBM4 citations73
US9679645B2Jun 13, 2017
Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
IBM5 citations73
US11025090B2Jun 1, 2021
Determining location and disruption sequence of power outages
IBM0 citations63
US8981326B2Mar 17, 2015
Phase change memory cell with heat shield
IBM2 citations63
US8772906B2Jul 8, 2014
Thermally insulated phase change material cells
IBM1 citations63
BREITWISCH MATTHEW J
9 patentsUS8338225B2Dec 25, 2012
Method to reduce a via area in a phase change memory cell
BREITWISCH MATTHEW J30 citations93
US8105859B2Jan 31, 2012
In via formed phase change memory cell with recessed pillar heater
BREITWISCH MATTHEW J16 citations92
US8633464B2Jan 21, 2014
In via formed phase change memory cell with recessed pillar heater
BREITWISCH MATTHEW J7 citations84
US8471236B2Jun 25, 2013
Flat lower bottom electrode for phase change memory cell
BREITWISCH MATTHEW J12 citations84
US8283650B2Oct 9, 2012
Flat lower bottom electrode for phase change memory cell
BREITWISCH MATTHEW J12 citations84
US8233317B2Jul 31, 2012
Phase change memory device suitable for high temperature operation
BREITWISCH MATTHEW J7 citations84
US8110901B2Feb 7, 2012
Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars
BREITWISCH MATTHEW J6 citations84
US8536675B2Sep 17, 2013
Thermally insulated phase change material memory cells
BREITWISCH MATTHEW J2 citations63
US8445313B2May 21, 2013
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
BREITWISCH MATTHEW J2 citations63
SCHROTT ALEJANDRO G
3 patentsUS8330137B2Dec 11, 2012
Pore phase change material cell fabricated from recessed pillar
SCHROTT ALEJANDRO G6 citations83
US8686391B2Apr 1, 2014
Pore phase change material cell fabricated from recessed pillar
SCHROTT ALEJANDRO G4 citations72
US8119528B2Feb 21, 2012
Nanoscale electrodes for phase change memory devices
SCHROTT ALEJANDRO G6 citations71
HAPP THOMAS D
2 patentsINTERMEC IP CORP
1 patentMACRONIX INT CO LTD
1 patentShowing the top 50 of 85 patents by PatentIndex Score.