Inventor
HUANG TSUNG-YI
TW109 patents
⚠️ This page may combine multiple inventors who share the name “HUANG TSUNG-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RICHTEK TECHNOLOGY CORP
18 patentsUS9853099B1Dec 26, 2017
Double diffused metal oxide semiconductor device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP9 citations83
US10600908B2Mar 24, 2020
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP2 citations73
US10418482B2Sep 17, 2019
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP3 citations73
US9634139B1Apr 25, 2017
Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP2 citations73
US9543303B1Jan 10, 2017
Complementary metal oxide semiconductor device with dual-well and manufacturing method thereof
RICHTEK TECHNOLOGY CORP3 citations73
US9853100B1Dec 26, 2017
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP2 citations67
US9520470B1Dec 13, 2016
Lateral double diffused metal oxide semiconductor device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP2 citations63
US10923589B2Feb 16, 2021
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP1 citations62
US10236375B2Mar 19, 2019
High voltage metal oxide semiconductor device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP1 citations62
US11171232B2Nov 9, 2021
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10998404B2May 4, 2021
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10943978B2Mar 9, 2021
High voltage device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10497806B2Dec 3, 2019
Metal oxide semiconductor device having recess and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10326016B2Jun 18, 2019
High-side power device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10236376B2Mar 19, 2019
High-side power device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10128373B2Nov 13, 2018
Metal oxide semiconductor device having recess and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US10056480B2Aug 21, 2018
High-side power device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
US9704987B2Jul 11, 2017
Lateral double diffused metal oxide semiconductor device and manufacturing method thereof
RICHTEK TECHNOLOGY CORP0 citations52
TAIWAN SEMICONDUCTOR MFG
14 patentsUS6468870B1Oct 22, 2002
Method of fabricating a LDMOS transistor
TAIWAN SEMICONDUCTOR MFG37 citations92
US7205630B2Apr 17, 2007
Method and apparatus for a semiconductor device having low and high voltage transistors
TAIWAN SEMICONDUCTOR MFG27 citations90
US7888734B2Feb 15, 2011
High-voltage MOS devices having gates extending into recesses of substrates
TAIWAN SEMICONDUCTOR MFG9 citations83
US7768071B2Aug 3, 2010
Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices
TAIWAN SEMICONDUCTOR MFG9 citations83
US7960786B2Jun 14, 2011
Breakdown voltages of ultra-high voltage devices by forming tunnels
TAIWAN SEMICONDUCTOR MFG17 citations82
US7928508B2Apr 19, 2011
Disconnected DPW structures for improving on-state performance of MOS devices
TAIWAN SEMICONDUCTOR MFG7 citations81
US7508032B2Mar 24, 2009
High voltage device with low on-resistance
TAIWAN SEMICONDUCTOR MFG13 citations81
US7816744B2Oct 19, 2010
Gate electrodes of HVMOS devices having non-uniform doping concentrations
TAIWAN SEMICONDUCTOR MFG7 citations74
US7476591B2Jan 13, 2009
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations74
US7989890B2Aug 2, 2011
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations73
US7977743B2Jul 12, 2011
Alternating-doping profile for source/drain of a FET
TAIWAN SEMICONDUCTOR MFG5 citations73
US8049295B2Nov 1, 2011
Coupling well structure for improving HVMOS performance
TAIWAN SEMICONDUCTOR MFG2 citations62
US7888216B2Feb 15, 2011
Method of fabricating a high performance power MOS
TAIWAN SEMICONDUCTOR MFG3 citations60
US7723785B2May 25, 2010
High performance power MOS structure
TAIWAN SEMICONDUCTOR MFG2 citations60
HUANG TSUNG-YI
13 patentsUS8772900B2Jul 8, 2014
Trench Schottky barrier diode and manufacturing method thereof
HUANG TSUNG-YI7 citations84
US8575693B1Nov 5, 2013
Double diffused metal oxide semiconductor device
HUANG TSUNG-YI11 citations84
US8389341B2Mar 5, 2013
Lateral power MOSFET with high breakdown voltage and low on-resistance
HUANG TSUNG-YI8 citations84
US8143130B1Mar 27, 2012
Method of manufacturing depletion MOS device
HUANG TSUNG-YI15 citations84
US9257421B2Feb 9, 2016
Transient voltage suppression device and manufacturing method thereof
HUANG TSUNG-YI3 citations71
US9343538B2May 17, 2016
High voltage device with additional isolation region under gate and manufacturing method thereof
HUANG TSUNG-YI2 citations63
US8859375B2Oct 14, 2014
High voltage device and manufacturing method thereof
HUANG TSUNG-YI2 citations63
US8685824B2Apr 1, 2014
Hybrid high voltage device and manufacturing method thereof
HUANG TSUNG-YI2 citations63
US8129783B2Mar 6, 2012
Lateral power MOSFET with high breakdown voltage and low on-resistance
HUANG TSUNG-YI4 citations63
US9287394B2Mar 15, 2016
Lateral double diffused metal oxide semiconductor device and manufacturing method thereof
HUANG TSUNG-YI2 citations60
US8643136B2Feb 4, 2014
High voltage device and manufacturing method thereof
HUANG TSUNG-YI2 citations60
US8525258B2Sep 3, 2013
Method for controlling impurity density distribution in semiconductor device and semiconductor device made thereby
HUANG TSUNG-YI2 citations60
US9117901B2Aug 25, 2015
High voltage device and manufacturing method thereof
HUANG TSUNG-YI0 citations52
SU RU-YI
2 patentsCHU CHEN-LIANG
1 patentLEADTREND TECH CORP
1 patentWANG SHEN-PING
1 patentShowing the top 50 of 109 patents by PatentIndex Score.