P

Inventor

LEE ROGER

US80 patents
⚠️ This page may combine multiple inventors who share the name “LEE ROGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

31 patents
US6498062B2Dec 24, 2002

DRAM access transistor

MICRON TECHNOLOGY INC121 citations99
US6383861B1May 7, 2002

Method of fabricating a dual gate dielectric

MICRON TECHNOLOGY INC158 citations99
US6137133AOct 24, 2000

Programmable non-volatile memory cell and method of forming a non-volatile memory cell

MICRON TECHNOLOGY INC130 citations99
US5751039AMay 12, 1998

Programmable non-volatile memory cell and method of forming a non-volatile memory cell

MICRON TECHNOLOGY INC142 citations99
US6358756B1Mar 19, 2002

Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme

MICRON TECHNOLOGY INC163 citations98
US6653154B2Nov 25, 2003

Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure

MICRON TECHNOLOGY INC45 citations96
US6521931B2Feb 18, 2003

Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme

MICRON TECHNOLOGY INC47 citations96
US5780891AJul 14, 1998

Nonvolatile floating gate memory with improved interploy dielectric

MICRON TECHNOLOGY INC44 citations96
US5661054AAug 26, 1997

Method of forming a non-volatile memory array

MICRON TECHNOLOGY INC48 citations96
US5159430AOct 27, 1992

Vertically integrated oxygen-implanted polysilicon resistor

MICRON TECHNOLOGY INC68 citations96
US6780732B2Aug 24, 2004

DRAM access transistor

MICRON TECHNOLOGY INC22 citations93
US6780652B2Aug 24, 2004

Self-aligned MRAM contact and method of fabrication

MICRON TECHNOLOGY INC28 citations93
US6087707AJul 11, 2000

Structure for an antifuse cell

MICRON TECHNOLOGY INC43 citations93
US5807778ASep 15, 1998

Method of manufacturing shallow trench source EPROM cell

MICRON TECHNOLOGY INC21 citations93
US5619454AApr 8, 1997

Programming method for healing over-erased cells for a flash memory device

MICRON TECHNOLOGY INC26 citations93
US5596213AJan 21, 1997

Shallow trench source EPROM cell

MICRON TECHNOLOGY INC18 citations93
US5445981AAug 29, 1995

Method of making shallow trench source EPROM cell

MICRON TECHNOLOGY INC25 citations93
US5397727AMar 14, 1995

Method of forming a floating gate programmable read only memory cell transistor

MICRON TECHNOLOGY INC26 citations93
US5232865AAug 3, 1993

Method of fabricating vertically integrated oxygen-implanted polysilicon resistor

MICRON TECHNOLOGY INC48 citations93
US6750069B2Jun 15, 2004

Minimally spaced MRAM structures

MICRON TECHNOLOGY INC18 citations92
US6274902B1Aug 14, 2001

Nonvolatile floating gate memory with improved interpoly dielectric

MICRON TECHNOLOGY INC15 citations92
US6177311B1Jan 23, 2001

Method for making a floating gate memory with improved interpoly dielectric

MICRON TECHNOLOGY INC15 citations92
US5736444AApr 7, 1998

Methods of forming non-volatile memory arrays

MICRON TECHNOLOGY INC28 citations92
US6682943B2Jan 27, 2004

Method for forming minimally spaced MRAM structures

MICRON TECHNOLOGY INC13 citations84
US6653675B2Nov 25, 2003

Dual gate dielectric construction

MICRON TECHNOLOGY INC10 citations74
US6157059ADec 5, 2000

Nonvolatile floating gate memory with improved interpoly dielectric

MICRON TECHNOLOGY INC6 citations74
US6117728ASep 12, 2000

Programmable non-volatile memory cell and method of forming a non-volatile memory cell

MICRON TECHNOLOGY INC7 citations74
US5245569ASep 14, 1993

Semiconductor memory device with circuit for isolating arrayed memory cells, and method for isolating

MICRON TECHNOLOGY INC16 citations74
US6765250B2Jul 20, 2004

Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure

MICRON TECHNOLOGY INC9 citations73
US6689661B2Feb 10, 2004

Method for forming minimally spaced MRAM structures

MICRON TECHNOLOGY INC11 citations73
US6689624B2Feb 10, 2004

Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure

MICRON TECHNOLOGY INC12 citations73

AMTRAN TECHNOLOGY CO LTD

3 patents

LEISURETIME PRODUCTS LTD

3 patents

LEE ROGER

3 patents

SEMICONDUCTOR MFG INT SHANGHAI

2 patents

CHENG LONG PLASTIC CO LTD

1 patent

TM PATENTS LP

1 patent

MICRON SEMICONDUCTOR INC

1 patent

MAJKRZAK CAROLYN

1 patent

HSIUNG CHI

1 patent

XIAO DE YUAN

1 patent

HTC CORP

1 patent

SIMPATICO IND CO LTD

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.