Inventor
LEE ROGER
US80 patents
⚠️ This page may combine multiple inventors who share the name “LEE ROGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
31 patentsUS6498062B2Dec 24, 2002
DRAM access transistor
MICRON TECHNOLOGY INC121 citations99
US6383861B1May 7, 2002
Method of fabricating a dual gate dielectric
MICRON TECHNOLOGY INC158 citations99
US6137133AOct 24, 2000
Programmable non-volatile memory cell and method of forming a non-volatile memory cell
MICRON TECHNOLOGY INC130 citations99
US5751039AMay 12, 1998
Programmable non-volatile memory cell and method of forming a non-volatile memory cell
MICRON TECHNOLOGY INC142 citations99
US6358756B1Mar 19, 2002
Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
MICRON TECHNOLOGY INC163 citations98
US6653154B2Nov 25, 2003
Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC45 citations96
US6521931B2Feb 18, 2003
Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
MICRON TECHNOLOGY INC47 citations96
US5780891AJul 14, 1998
Nonvolatile floating gate memory with improved interploy dielectric
MICRON TECHNOLOGY INC44 citations96
US5661054AAug 26, 1997
Method of forming a non-volatile memory array
MICRON TECHNOLOGY INC48 citations96
US5159430AOct 27, 1992
Vertically integrated oxygen-implanted polysilicon resistor
MICRON TECHNOLOGY INC68 citations96
US6780732B2Aug 24, 2004
DRAM access transistor
MICRON TECHNOLOGY INC22 citations93
US6780652B2Aug 24, 2004
Self-aligned MRAM contact and method of fabrication
MICRON TECHNOLOGY INC28 citations93
US6087707AJul 11, 2000
Structure for an antifuse cell
MICRON TECHNOLOGY INC43 citations93
US5807778ASep 15, 1998
Method of manufacturing shallow trench source EPROM cell
MICRON TECHNOLOGY INC21 citations93
US5619454AApr 8, 1997
Programming method for healing over-erased cells for a flash memory device
MICRON TECHNOLOGY INC26 citations93
US5596213AJan 21, 1997
Shallow trench source EPROM cell
MICRON TECHNOLOGY INC18 citations93
US5445981AAug 29, 1995
Method of making shallow trench source EPROM cell
MICRON TECHNOLOGY INC25 citations93
US5397727AMar 14, 1995
Method of forming a floating gate programmable read only memory cell transistor
MICRON TECHNOLOGY INC26 citations93
US5232865AAug 3, 1993
Method of fabricating vertically integrated oxygen-implanted polysilicon resistor
MICRON TECHNOLOGY INC48 citations93
US6750069B2Jun 15, 2004
Minimally spaced MRAM structures
MICRON TECHNOLOGY INC18 citations92
US6274902B1Aug 14, 2001
Nonvolatile floating gate memory with improved interpoly dielectric
MICRON TECHNOLOGY INC15 citations92
US6177311B1Jan 23, 2001
Method for making a floating gate memory with improved interpoly dielectric
MICRON TECHNOLOGY INC15 citations92
US5736444AApr 7, 1998
Methods of forming non-volatile memory arrays
MICRON TECHNOLOGY INC28 citations92
US6682943B2Jan 27, 2004
Method for forming minimally spaced MRAM structures
MICRON TECHNOLOGY INC13 citations84
US6653675B2Nov 25, 2003
Dual gate dielectric construction
MICRON TECHNOLOGY INC10 citations74
US6157059ADec 5, 2000
Nonvolatile floating gate memory with improved interpoly dielectric
MICRON TECHNOLOGY INC6 citations74
US6117728ASep 12, 2000
Programmable non-volatile memory cell and method of forming a non-volatile memory cell
MICRON TECHNOLOGY INC7 citations74
US5245569ASep 14, 1993
Semiconductor memory device with circuit for isolating arrayed memory cells, and method for isolating
MICRON TECHNOLOGY INC16 citations74
US6765250B2Jul 20, 2004
Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC9 citations73
US6689661B2Feb 10, 2004
Method for forming minimally spaced MRAM structures
MICRON TECHNOLOGY INC11 citations73
US6689624B2Feb 10, 2004
Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC12 citations73
AMTRAN TECHNOLOGY CO LTD
3 patentsLEISURETIME PRODUCTS LTD
3 patentsLEE ROGER
3 patentsSEMICONDUCTOR MFG INT SHANGHAI
2 patentsCHENG LONG PLASTIC CO LTD
1 patentTM PATENTS LP
1 patentMICRON SEMICONDUCTOR INC
1 patentMAJKRZAK CAROLYN
1 patentHSIUNG CHI
1 patentXIAO DE YUAN
1 patentHTC CORP
1 patentSIMPATICO IND CO LTD
1 patentShowing the top 50 of 80 patents by PatentIndex Score.