Inventor
WANG HUI-CHUAN
US74 patents
⚠️ This page may combine multiple inventors who share the name “WANG HUI-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEADWAY TECHNOLOGIES INC
33 patentsUS7602033B2Oct 13, 2009
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
HEADWAY TECHNOLOGIES INC82 citations98
US6322640B1Nov 27, 2001
Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element
HEADWAY TECHNOLOGIES INC59 citations96
US7978439B2Jul 12, 2011
TMR or CPP structure with improved exchange properties
HEADWAY TECHNOLOGIES INC15 citations93
US7780820B2Aug 24, 2010
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
HEADWAY TECHNOLOGIES INC23 citations93
US7672088B2Mar 2, 2010
Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
HEADWAY TECHNOLOGIES INC27 citations93
US7476954B2Jan 13, 2009
TMR device with Hf based seed layer
HEADWAY TECHNOLOGIES INC36 citations93
US7333306B2Feb 19, 2008
Magnetoresistive spin valve sensor with tri-layer free layer
HEADWAY TECHNOLOGIES INC40 citations93
US6785954B2Sep 7, 2004
Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
HEADWAY TECHNOLOGIES INC23 citations93
US6449131B2Sep 10, 2002
Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
HEADWAY TECHNOLOGIES INC37 citations93
US6129957AOct 10, 2000
Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications
HEADWAY TECHNOLOGIES INC37 citations91
US6024886AFeb 15, 2000
Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording
HEADWAY TECHNOLOGIES INC36 citations90
US8921126B2Dec 30, 2014
Magnetic seed method for improving blocking temperature and shield to shield spacing in a TMR sensor
HEADWAY TECHNOLOGIES INC5 citations84
US8008740B2Aug 30, 2011
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
HEADWAY TECHNOLOGIES INC10 citations84
US7986498B2Jul 26, 2011
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer
HEADWAY TECHNOLOGIES INC11 citations84
US7829963B2Nov 9, 2010
TMR device with Hf based seed layer
HEADWAY TECHNOLOGIES INC12 citations84
US7646568B2Jan 12, 2010
Ultra thin seed layer for CPP or TMR structure
HEADWAY TECHNOLOGIES INC9 citations84
US7602590B2Oct 13, 2009
Tunneling magneto-resistive spin valve sensor with novel composite free layer
HEADWAY TECHNOLOGIES INC10 citations84
US7564658B2Jul 21, 2009
CoFe insertion for exchange bias and sensor improvement
HEADWAY TECHNOLOGIES INC16 citations84
US7390530B2Jun 24, 2008
Structure and process for composite free layer in CPP GMR device
HEADWAY TECHNOLOGIES INC15 citations84
US6870711B1Mar 22, 2005
Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices
HEADWAY TECHNOLOGIES INC17 citations84
US6310751B1Oct 30, 2001
Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
HEADWAY TECHNOLOGIES INC18 citations84
US7742261B2Jun 22, 2010
Tunneling magneto-resistive spin valve sensor with novel composite free layer
HEADWAY TECHNOLOGIES INC6 citations74
US7497007B2Mar 3, 2009
Process of manufacturing a TMR device
HEADWAY TECHNOLOGIES INC7 citations74
US7377025B2May 27, 2008
Method of forming an improved AP1 layer for a TMR device
HEADWAY TECHNOLOGIES INC5 citations74
US7234228B2Jun 26, 2007
Method of fabricating novel seed layers for fabricating spin valve heads
HEADWAY TECHNOLOGIES INC9 citations74
US7111386B2Sep 26, 2006
Lead plating method for GMR head manufacture
HEADWAY TECHNOLOGIES INC7 citations74
US7050273B2May 23, 2006
Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon
HEADWAY TECHNOLOGIES INC8 citations74
US7035060B2Apr 25, 2006
Easily manufactured exchange bias stabilization scheme
HEADWAY TECHNOLOGIES INC6 citations74
US6230390B1May 15, 2001
Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
HEADWAY TECHNOLOGIES INC7 citations74
US9214170B2Dec 15, 2015
TMR device with low magnetostriction free layer
HEADWAY TECHNOLOGIES INC5 citations73
US6496337B1Dec 17, 2002
Copper alloy GMR recording head
HEADWAY TECHNOLOGIES INC10 citations73
US8865008B2Oct 21, 2014
Two step method to fabricate small dimension devices for magnetic recording applications
HEADWAY TECHNOLOGIES INC5 citations72
US9281469B2Mar 8, 2016
Magnetic seed for improving blocking temperature and shield to shield spacing in a TMR sensor
HEADWAY TECHNOLOGIES INC2 citations63
ZHAO TONG
7 patentsUS8259420B2Sep 4, 2012
TMR device with novel free layer structure
ZHAO TONG22 citations93
US8059374B2Nov 15, 2011
TMR device with novel free layer structure
ZHAO TONG42 citations93
US9040178B2May 26, 2015
TMR device with novel free layer structure
ZHAO TONG13 citations84
US8557407B2Oct 15, 2013
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
ZHAO TONG11 citations84
US8456781B2Jun 4, 2013
TMR device with novel free layer structure
ZHAO TONG11 citations84
US8337676B2Dec 25, 2012
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
ZHAO TONG8 citations84
US8202572B2Jun 19, 2012
TMR device with improved MgO barrier
ZHAO TONG19 citations84
WANG HUI-CHUAN
4 patentsUS8472151B2Jun 25, 2013
TMR device with low magnetorestriction free layer
WANG HUI-CHUAN15 citations84
US8335105B2Dec 18, 2012
Magnetic memory cell
WANG HUI-CHUAN8 citations84
US8728333B2May 20, 2014
Method to fabricate small dimension devices for magnetic recording applications
WANG HUI-CHUAN8 citations83
US8747629B2Jun 10, 2014
TMR device with novel free layer
WANG HUI-CHUAN4 citations73
ZHANG KUNLIANG
3 patentsUS8164862B2Apr 24, 2012
Seed layer for TMR or CPP-GMR sensor
ZHANG KUNLIANG25 citations93
US8339754B2Dec 25, 2012
TMR or CPP structure with improved exchange properties
ZHANG KUNLIANG8 citations84
US8289663B2Oct 16, 2012
Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers
ZHANG KUNLIANG8 citations84
HEADWAY TECH INC
2 patentsMAGIC TECHNOLOGIES INC
1 patentShowing the top 50 of 74 patents by PatentIndex Score.