Inventor
YANAGISAWA MUNEHISA
JP14 patents
⚠️ This page may combine multiple inventors who share the name “YANAGISAWA MUNEHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
13 patentsUS5636023AJun 3, 1997
Apparatus for measuring surface shape
SHINETSU HANDOTAI KK12 citations72
US5985023ANov 16, 1999
Method for growth of a nitrogen-doped gallium phosphide epitaxial layer
SHINETSU HANDOTAI KK4 citations62
US5759267AJun 2, 1998
Liquid phase epitaxial
SHINETSU HANDOTAI KK2 citations62
US5603761AFeb 18, 1997
Liquid phase epitaxial growth method for carrying out the same
SHINETSU HANDOTAI KK2 citations62
US5349208ASep 20, 1994
GaP light emitting element substrate with oxygen doped buffer
SHINETSU HANDOTAI KK5 citations61
US5571321ANov 5, 1996
Method for producing a gallium phosphide epitaxial wafer
SHINETSU HANDOTAI KK5 citations60
US5407858AApr 18, 1995
Method of making gap red light emitting element substrate by LPE
SHINETSU HANDOTAI KK2 citations60
US5731209AMar 24, 1998
Method for the determination of nitrogen concentration in compound semiconductor
SHINETSU HANDOTAI KK1 citations51
US5851850ADec 22, 1998
Method for fabricating a gap type semiconductor substrate of red light emitting devices
SHINETSU HANDOTAI KK0 citations50
US5234534AAug 10, 1993
Liquid-phase growth process of compound semiconductor
SHINETSU HANDOTAI KK0 citations50
US5300792AApr 5, 1994
Gap red light emitting diode
SHINETSU HANDOTAI KK1 citations48
US5643827AJul 1, 1997
GaP light emitting substrate and a method of manufacturing it
SHINETSU HANDOTAI KK0 citations47
US5514881AMay 7, 1996
Gap light emitting device having a low carbon content in the substrate
SHINETSU HANDOTAI KK1 citations47