Inventor

KO HYOUNG-SOO

KR39 patents

⚠️ This page may combine multiple inventors who share the name “KO HYOUNG-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO HYOUNG-SOO

SAMSUNG ELECTRONICS CO LTD

Semiconductor probe with resistive tip and method of fabricating the same

Nano imprint master and method of manufacturing the same

High density data storage device and data recording or reproduction method using the same

Semiconductor probe having resistive tip and method of fabricating the same

Electric field read/write head and method of manufacturing same and data read/write device

Semiconductor probe and method of writing and reading information using the same

Method of manufacturing semiconductor probe having resistive tip

Semiconductor probe with resistive tip having metal shield thereon

Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head

Method of fabricating electric field sensor having electric field shield

Ferroelectric recording medium and writing method for the same

Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same

Ferroelectric recording medium and writing method for the same

Method of fabricating resistive probe having self-aligned metal shield

Magnetic logic device and methods of manufacturing and operating the same

Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same

Electric field read/write device and method of driving the same

Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same

Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus

Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same

Resistive memory device having array of probes and method of manufacturing the resistive memory device

Simulation method and system

Semiconductor probe having wedge shape resistive tip and method of fabricating the same

Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof

Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same

KO HYOUNG-SOO

Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head

Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same

Unit pixels, depth sensors and three-dimensional image sensors including the same

Unit pixels, depth sensors and three-dimensional image sensors including the same

JUNG JU-HWAN

Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the same

Electric field read/write head

HYUNDAI ELECTRONICS IND

Stacked semiconductor chip package having external terminal pads and stackable chips having a protection layer

KIM WOO JOO

Pixel for depth sensor and image sensor including the pixel

KIM WON JOO

Sensor, data processing system, and operating method

KIM HAE-SUNG

Apparatus comprising substrate and conductive layer

SEAGATE TECHNOLOGY LLC

Apparatus comprising substrate and conductive layer

SEAGATE TECHNOLOGY INT

Conductive layer including implanted metal ions

HONG SEUNG-BUM

Ferroelectric hard disk system

PARK DOO CHEOL

Method of fabricating microlens, and depth sensor including microlens